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Thursday 14th July 2016
Further strengthens position in compound semiconductors including SiC, GaN-on-Si, and GaN-on-SiC
Thursday 14th July 2016
The schematic above shows the chemical assembly of two-dimensional crystals. Graphene is first etched into channels and the TMDC molybdenum disulfide (MoS2) begins to nucleate around the edges and within the channel. On the edges, MoS2 slightly overlaps on top of the graphene. Finally, further growth results in MoS2 completely filling the channels. (Credit Berkeley Lab)
Wednesday 13th July 2016
LI-ion battery on the road to energy storage heaven by Marianne Boust, Principal Analyst, IHS Technology
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Tuesday 12th July 2016
The research factory at FAPS produces and tests novel assembly and bonding technologies for power electronics. (Image: FAU)
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Monday 11th July 2016
Accompanying control IC and evaluation board designed to jump-start prototyping
Friday 8th July 2016
SSPAs deliver 50 to 100W with 15 percent more efficiency than previous models
Friday 8th July 2016
Operating current of over 20A demonstrated with 1.5mm square vertical GaN transistor
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Tuesday 5th July 2016
Pump-free design for flow battery could offer advantages in cost and simplicity.A new concept for a flow battery functions like an old hourglass or egg timer, with particles (in this case carried as a slurry) flowing through a narrow opening from one tank to another. The flow can then be reversed by turning the device over. Image courtesy of the researchers.

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