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Thursday 19th September 2013
Bandgap materials GaN and SiC are generating significant buzz globally. Strategy Analytics expects SiC to be the primary replacement technology for silicon power devices, while GaN seeks initial commercial traction in applications with breakdown voltages of less than <600V and power requirements of less than 5kW. 
Tuesday 17th September 2013
Industry’s first MOSFET platform to deliver integrated Schottky performance with low leakage current.
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Tuesday 17th September 2013
Substation to boost transmission capacity and strengthen grid reliability in Rio de Janeiro
Monday 16th September 2013
Inductance-to-digital converter revolutionizes position and motion sensing
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Monday 26th August 2013
The Nexview profiler has 3D imaging and measurement system for rapid, precise, quantitative, and interactive surface metrology suited to semiconductor analysis

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