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Friday 8th August 2014
First high temperature operation of fully integrated device
Thursday 7th August 2014
Dielectric film growth technique could improve next generation SiC power devices
Wednesday 6th August 2014
Microwave industry veteran has proven track record to boost growth 
Tuesday 5th August 2014
One of only nine fabs to win DoD accreditation
Tuesday 5th August 2014
50W GaN on SiC transistor targets 1.2 to 1.4 GHz
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Thursday 31st July 2014
Integrated suite of design and simulation tools for microwave and RF design
Thursday 31st July 2014
Design targets junction leakage suppression 
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Tuesday 29th July 2014
High temperature SiC technology central to MEA project
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Wednesday 23rd July 2014
Hint to competitors: use wide band gap semiconductors such as GaN and SiC
Wednesday 23rd July 2014
Designed to Minimise Power Supply Loss in Large Data Processing Servers

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