News Article

Sumitomo Ramps GaN-on-SiC Production With Aixtron Tool


AIX G5+ Planetary MOCVD platform supports capacity RF device ramp-up for RF using 6 inch wafers

Deposition equipment firm Aixtron SE has announced that Japanese group Sumitomo Electric Device Innovations, Inc. (SEDI) has ordered an AIX G5+ tool with 8x6-inch wafer configuration in order to expand the production capacity of GaN-on-SiC radio frequency (RF) devices for wireless applications such as radars, satellite communication and base stations for the rapidly expanding 5G mobile networks. The system is scheduled for delivery in 2019.

SEDI has already been successfully relying on Aixtron's Showerhead technology for the production of 4-inch GaN epitaxial wafers. The progressive deployment of 5G networks but also the introduction of new technologies like beamforming is foreseen to drive a rapid upturn in demand steering the adoption of more efficient 6-inch substrates for RF applications on Aixtron's proven Planetary systems.

By selecting the AIX G5+ Planetary MOCVD platform, SEDI relies on the tool-of-record for GaN-based HEMTs warranting not only superior process yields but also enabling lowest cost of ownership of the market. The system has an unmatched reputation for wafer uniformity and precise process control, which is especially important for device production on cost-intensive silicon carbide wafers. The new reactor is equipped with an EpiCurve TT metrology system as well as with Auto-Feed Forward and P400 UV Pyrometer Close Loop temperature control.

SEDI already has a range of GaN HEMT devices on offer for radar, mobile phone base-stations, and general applications. These GaN-on-SiC HEMT devices enable high power amplification at operating frequencies of 28-40 GHz and beyond as required by new 5G communication standards.

Dirk Knorr And Josef Wörner Take Over Management At Würth Elektronik EiSos GmbH & Co. KG
Mercedes-Benz EQS To Sport A Range Of 700 Kms
Tektronix Enhances Entry Solutions Portfolio With Expanded TBS1000C Digital Storage Oscilloscope
Hua Hong Semiconductor Relies On '8-inch + 12-inch' Strategy To Accelerate Development In IGBT Market
Groupe PSA Strengthens Its Electric Offensive With New EVMP Platform
Delta Uses ON Semi SiC Power Modules
GaN And SiC Power Semi Market Shifts To Bigger Players
SMART Modular Expands Specialty Memory, Storage And Hybrid Solutions In Western Europe
BMW Establishes Long-term Supply Contract With Northvolt
Signal Transmission With Reliable Galvanic Isolation
FEV Launches New Solutions For High Voltage Battery Testing
VINCOTECH Announces CEO Transition
Verkor To Ramp Up Battery Cell Production In Southern Europe
BrightLoop And GaN Systems Announce Partnership
CATL To Supply Batteries To Trailer Dynamics In Europe
Sonnedix Adds 8.2 MW To Its Italian Portfolio
Navitas Partners With Lenovo On GaN Fast Charger
BMW Group Develops Sustainable Material Cycle For Battery Cells
Power GaN: Benefits Across The Board
GLOBALFOUNDRIES Partners With Synopsys, Mentor, And Keysight On Interoperable Process Design Kit (iPDK)
BYD’s Flagship Han EV Series Officially Goes On Sale
Britishvolt Announces Collaboration With Pininfarina
Single-pair Ethernet PHY Offers The Industry’s Leading Ultra-low TC10-compliant Sleep Current
Navitas GaN IC Drives Latest OPPO Fast Chargers

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: