Toshiba MOSEFT wins AspenCore Award
40V MOSFET for automotive applications noted for high current, high heat dissipation and high reliability
Toshiba has won the 'Power Semiconductor/Driver of the Year' category in the World Electronics Achievement Awards (WEAA) 2022.
US-based technology media grou AspenCore gave the award for 'Power Semiconductor/Driver of the Year' to Toshiba’s XPQR3004PB MOSFET.
The XPQR3004PB is an N-channel, 40V low-voltage MOSFET for automotive applications. It is suitable for battery switches in eco-friendly vehicles and driving assist motors in mild hybrids. It is Toshiba’s most advanced UMOS IX die and is clipped to L-TOGL package. AspenCore noted its high current, high heat dissipation capability and high reliability.
Tsutomu Nomura, president of Toshiba Devices & Storage (Shanghai) said: “We are delighted to be recognised by the prestigious WEAA. This is the fifth year in a row one of our products has taken an award. Toshiba is determined to continue to lead the way in providing the automotive industry and other sectors with power electronics that improve the operating efficiency of equipment and advance carbon neutrality.”
