+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

Vishay acquires MaxPower Semi

News

Acquisition adds SiC technologies to Vishay's MOSFET product offerings

Vishay Intertechnology, a large manufacturer of discrete semiconductors and passive electronic components, has acquired MaxPower Semiconductor, Inc.

MaxPower is a San Jose, California based fabless power semiconductor with a substantial IP portfolio of over 100 patents covering silicon and SiC MOSFETs. Its SiC product development includes both trench and planar technologies from 650V to 1,700V targeting automotive and industrial applications.

“As Vishay orients the company for growth, innovation will play an important role, and we plan to intensify business development activities focused on acquiring technologies that offer attractive opportunities to expand our product portfolio and strengthen our competitive positioning,” said Marc Zandman, executive chair of the board. “Importantly, this acquisition will enable Vishay to support customers’ advanced development of high voltage electrification applications thereby opening the door for us to provide them with our entire portfolio of products.”

“MaxPower’s team of world-renowned power semiconductor experts brings extensive experience in R&D, design and application of power devices and we look forward to working with the team to develop product offerings that will serve fast-growing markets such as electric vehicles and enhance our leadership in MOSFETs,” said Gerald Paul, president and CEO.

The purchase price was comprised of cash consideration at closing of $50.0 million, net of cash acquired, and contingent payments of up to $57.5 million that will be payable upon the achievement of certain technology milestones, and the occurrence of certain non-operating events. MaxPower will be incorporated into Vishay’s MOSFETs reportable segment.

Infineon introduces new synchronous buck regulators
Flex Power launches 16-160V DC-DCs
Renesas driver family enables torque at zero speed
Rohm adds SiC and IGBT models to SPICE library
Wolfspeed completes sale of RF business to Macom
TI expands low-power GaN portfolio
EET uses EPC GaN FET in balcony solar product
Coherent’s SiC business completes $1B investment
Ebook: Four Considerations for High-Speed Digital Design Success
Change of CEO at Clas-SiC fab
Transphorm releases new charger designs
SIPLACE TX micron from ASMPT combines SMT assembly and die processing
Spirox and Southport announce SiC defect tool
Nexperia releases first SiC MOSFETs
$1.2M NSF award to test power grid stability
Infineon introduces 15V trench power MOSFETs in PQFN
Diamond device has highest breakdown voltage
Würth Elektronik extends its terminal block connector series
EU project paves way for improved grid resilience
DOE announces $42M to update US power grid
New 650V CoolMOS option targets fast EV charging
Toshiba launches first 30V N-channel common-drain MOSFET
Onsemi opens European EV systems lab
Infineon adds 62mm package to CoolSiC portfolio
Legrand chooses Innoscience GaN chips
Transphorm and Allegro partner on GaN driver solution
QPT shortlisted for ABB power density challenge
Microchip Releases Its Latest TrustAnchor Security IC
Infineon revenue and profits up
Heraeus acquires stake in start-up Zadient
OKI develops GaN lift off/bonding technology
Odyssey is meeting key milestones, says CEO

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Adblocker Detected
Please consider unblocking adverts on this website