Superjunction Sparks Super Devices In Silicon Carbide
Armed with a clever charge-balance structure, SiC power devices are pushing beyond their limit.
BY JAN CHOCHOL AND ROMAN MALOUSEK FROM ONSEMI
The entire power electronics industry isbuzzing with SiC activity. It's no wonder, given that SiC devices have adielectric breakdown field strength that's ten times higher than that ofsilicon, as well as twice the electron saturation velocity of the incumbent,three times its bandgap, and a thermal conductivity that is better by a factorof three. All high-power applications benefit from these traits, shown inFigure 1, so it's of no surprise that vendors, fabs and OEMs are embracing therapid adoption of SiC. All are trying to outperform, outlast and outclass theircompetition.