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News Article

EPC introduces 100V 3.8mΩ GaN FET


Expanded family of packaged GaN FETs offers footprint-compatible solutions

Efficient Power Conversion (EPC) introduces the 100 V, 3.8 mΩ EPC2306 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio.

It isdesigned for 48 V DC-DC conversion used in high-density computing applications, in 48 V BLDC motor drives for e-mobility and robotics, and in solar optimisers and microinverters, and Class D Audio.

The EPC2306 GaN FET offers a super small RDS(on), of just 3.8 mOhm, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with exposed top and footprint of just 3 mm x 5 mm, offering an extremely small solution size for the highest power density applications.

The EPC2306 is footprint compatible with the previously released 100 V, 1.8 mOhm EPC2302. The two footprint compatible devices allow designers to trade off RDS(on) vs. price to optimise solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.

“The EPC2306 combines the advantages of 100 V GaN with an easy to assemble QFN package without sacrificing performance,” said Alex Lidow, CEO and co-founder of EPC. “Designers can use our family of packaged GaN FETs to make lighter weight battery-operated BLDC motor drives for eMobility and drones, higher efficiency 48 V input DC-DC converters for data center, datacom, artificial intelligence, and other industrial and consumer applications.”

Development Board

The EPC90145 development board is a 100 V maximum device voltage, 45 A maximum output current, half bridge featuring EPC2306 GaN FET. The purpose of this board is to simplify the evaluation process to speed time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.

The EPC2306 is priced at $3.08 each in 1 Ku volumes. The development board is priced at $200.00 each.

Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions.

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