Richardson RFPD Introduces New 650V GaN Transistors
Second-generation devices offer improved robustness and cost performance
Richardson RFPD, an Arrow Electronics company, has announced the availability and full design support capabilities for two new 650 V E-mode GaN transistors from GaN Systems.
The new GaN transistors GS-065-060-3-B/T provide low RDS(on) (25 mΩ) and feature a 60 A IDS rating and GaN Systems' Island Technology cell layout for high-current die performance and yield. The devices feature an updated design and are offered in GaNpx packaging that enables low inductance and low thermal resistance in a small package.
The GS-065-060-3-B is bottom-side cooled; the GS-065-060-3-T is top-side cooled. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, on-board chargers, UPS, industrial motor drives and wireless power transfer.
Additional key features of the new GaN transistors include: IDS(max): 60 A; simple gate drive requirements (0 V to 6 V); transient tolerant gate drive (-20 / +10 V); high switching frequency (> 10 MHz); fast and controllable fall and rise times; reverse conduction capability; zero reverse recovery loss; and dual gate pads for optimal board layout.