Tower Semi Expands BCD options
New BCD platforms support higher power and higher voltage ICs
Tower Semiconductor, a foundry for high-value analogue semiconductor solutions, has announced the expansion of its power management platforms with the release of the second generation of its state of the art 65nm bipolar-CMOS-DMOS (BCD) expanding operation to 24V and reducing Rdson by 20 percent. The company is also adding deep trench isolations to its 180nm BCD platform enabling up to 40 percent die size reduction for voltages up to 125V. The new releases address the increasing demand for higher power ICs at higher voltages and power efficiency,.
Tower says its second-generation 65nm BCD benefits from power performance and/or die size reduction by up to 20 percent due to the decrease in LDMOS Rdson for devices up to 16V together with voltage extension to 24V operation. These advancements firmly address the needs of the computing and consumer markets for monolithic high-power converters, including, high-power voltage regulator for CPU and GPUs in addition to applications such as chargers, high-power motor drivers, and power converters.
The company’s 180nm BCD deep trench isolation scheme (DTI) is said to offer improved noise immunity within a single IC, flexibility at the elevated voltages enabling to select between multiple isolation scheme, and reduced die size by up to 40 percent. All these strategic features support the market’s increasing deployment of 48V systems that require ICs to hold voltages up to 120V and more; and specifically address the advancing requirements of the industrial and automotive applications including gate drivers, power converters, motor drivers, and automotive 48V systems with their demand for advanced isolations in ICs with multiple voltage domains at a smaller die size.
Tower will present its latest power management technologies at the 2022 PCIM conference in Nürnberg, Germany, May 10 – 12, 2022.