News Article

Nexperia Brings Power Expertise Live To PCIM 2022


Company to show latest products and feature In-person talks and demos

Nexperia will attend the power electronics exhibition and conference PCIM Europe, running from 10th to 12th May 2022 in Nuremberg, Germany.

The company will be showing a wide range of WBG products including: CCPAK, a surface-mount copper-clip package for Power GaN FETs; an evaluation board for benchmarking dynamic performance of 650 V SiC rectifiers; and Broadcom half bridge evaluation board using Nexperia CCPAK GaN FETs & Nexperia Totem Pole PFC demo containing TO-247 GaN FETs

For power management, Nexperia will feature LFPAK88 MOSFETs for 12 V high current circuit protection applications live demo; power bipolar transistors in high voltage LED lighting application; and a clip-bonded FlatPower (CFP) package replacing SMx demo.

For motor control applications, the company will be showing 500 A High Current MOSFETs live demo; LFPAK MOSFETs increasing to highest current in BLDC motor control demo; and 50/55 V Application Specific MOSFETs (ASFETs).

Next generation support tools for power design engineers include: precision electrothermal models for MOSFETs enabling early design validation; interactive application notes and MOSFET & GaN FET application handbook.

Also, at PCIM 2022 Nexperia will show how LFPAK MOSFETs are used in a revolutionary surfboard e-fin and deliver a number of live technology talks on MOSFETs, GaN FETs and component technology for vehicle electrification.

“After more than two years being forced to attend events virtually, the team at Nexperia is excited to once again be able to reconnect with valued customers in-person at PCIM 2022”, according to Chris Boyce, senior director marketing & product group head at Business Group MOSFETs at Nexperia. “Digital collaboration tools have their place, but nothing can replace the type of interpersonal connection that happens at industry events, and which so often acts as a catalyst for new and innovative designs ideas”.

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