{megaLeaderboard}
{normalLeaderboard}
News Article

Transphorm 1200V GaN Fet Delivers 99% Efficient Switching

News

Company will reveal the latest R&D results from an ultra efficient 1200V GaN device at IEEE ISPSD in May 2022

Transphorm will demonstrate the latest R&D results from its 1200V GaN device at the IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD).

The 1200V GaN device delivers greater than 99 percent efficiency and performs well against a leading SiC MOSFET of similar on-resistance. Partially funded by the ARPA-E CIRCUITS program, Transphorm is developing the technology for electric vehicle mobility and infrastructure power systems as well as industrial and renewable energy systems. This major milestone further strengthens Transphorm's ability to support the broadest range of power—from 45W to 10K+ kW—across the widest range of cross-industry applications when compared to any other GaN supplier today.

The ISPSD presentation in May will provide detailed information of device configuration and performance analysis conducted using a hard-switched, synchronous boost half bridge topology. The initial 1200V GaN device in a TO-247 package has an RDS(on) of 70 milliohms and easily scales to lower resistance and higher power levels. Early results show notably low leakage with a breakdown voltage of greater than 1400V.

“Building on Transphorm's unique vertically integrated capability, our engineers have yet again pushed the limits of what's possible with GaN,” said Umesh Mishra, CTO and Co-founder, Transphorm. “We aim to bring to market an ultra-high voltage, reliable GaN product that will give customers more choice when developing power systems. Our 1200-volt GaN FET will enable excellent performance with greater designability and cost effectiveness than SiC solutions. We see this as an important milestone for the GaN power electronics industry.”

“1200V GaN has been discussed within the industry for some time, but often perceived as rather difficult to achieve,” said Isik Kizilyalli, associate director for technology at the Advanced Research Projects Agency - Energy (ARPA-E). “As part of the ARPA-E CIRCUITS program led by the Illinois Institute of Technology, the Transphorm team has demonstrated an important breakthrough, showcasing GaN performance at the 1200V device node with high efficiency 800Vswitching.”

Transphorm's 1200V FETs are expected to be available for sampling in 2023.


{inStory3}
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
X
Live Event