Ampleon boosts GaN-on-SiC HEMT performance
Devices offer broadband high linearity features under low bias settings
Ampleon has announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30 and 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from the company's Generation 3 GaN-SiC HEMT process recently qualified and released to production.
The devices offer broadband high linearity features under low bias settings to raise the performance levels for broadband linearity (under -32dBc third-order intermodulation products at 5dB, and less than -42dBc at 8dB back-off from saturated power over a 2:1 bandwidth). Broadband linearity is vital for frequency-agile radios deployed in today’s defense electronics for handling multi-mode communication waveforms (from FM through high-order QAM signals) with simultaneous application of countermeasure channels. These demanding applications require transistors with inherently better broadband linearity. Based on market feedback, the Ampleon Generation 3 GaN-on-SiC HEMT transistors meet these extended broadband linearity requirements.
In addition, the Generation 3 transistors are housed in a thermally enhanced package, which enables reliable operation and offers an extremely rugged VSWR withstand capability of up to 15:1 for a 30 Watt device. The ruggedness extends to Class A operation, common to instrumentation applications with saturated gate conditions while maintaining linearity over a wide dynamic range at extended frequency ranges.
