Toshiba launches new SiC MOSFET modules
1200V and1700V modules enable smaller, more efficient industrial equipment
Toshiba has launched two new SiC MOSFET dual modules. The MG600Q2YMS3 has a voltage rating of 1200V and drain current rating of 600A; and the MG400V2YMS3 has a voltage rating of 1700V and drain current rating of 400A.
The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.
The new modules have mounting compatibility with widely used silicon IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Applications include inverters and converters for railway vehicles, renewable energy power generation systems, motor control equipment, and high frequency DC-DC converters.