Info
Info
News Article

Nexperia 650V GaN FETs Enable 80 PLUS Titanium-class Power Supplies

News

Second-generation power GaN FET devices offer significant performance advantages

Nexperi has announced volume availability of its second-generation 650 V power GaN FET device family, offering significant performance advantages over previous technologies and competitive devices.

With RDS(on) performance down to 35 mΩ (typical), the new power GaN FETs target single phase AC/DC and DC/DC industrial switched mode power supplies (SMPS), ranging from 2 kW to 10 kW, especially server and telecoms supplies that must meet 80 PLUS Titanium efficiency regulations. The devices are also an excellent fit for solar inverters and servo drives in the same power range.

Available in TO-247 packaging, the new 650V H2 power GaN FETs deliver a 36 percent shrinkage in die size for a given RDS(on) value, for better stability and efficiency. The cascode configuration eliminates the need for complicated drivers, speeding time to market. The devices deliver high performance in both hard-switching and soft-switching configurations, offering designers maximum flexibility.

Dilder Chowdhury, Nexperia's GaN strategic marketing director explains: “Titanium is the most demanding of the 80 PLUS specifications, requiring >91 percent efficiency under full load conditions (>96 percent at 50 percent load). Achieving this level of performance in server power applications operating at 2 kW and above, using conventional silicon components, is complex and challenging. Nexperia's new power GaN FETs are ideally suited to an elegant, bridgeless totem pole configuration that uses fewer components and reduces both physical size and costs.”

The Nexperia GAN041-650WSB GaN FETs are now available in high volume.

Infineon To Present At Virtual Power Conference
SSE Renewables Chooses SEANEX Connection System For Seagreen Offshore Wind Farm Project
CISSOID Expands SiC Power Module Range
Power Integrations’ HiperPFS-4 Power Factor Correction IC Delivers 98% Full-Load Efficiency
EPC To Show Latest EGaN FETs At PCIM Europe 2021
World-leading Circular Solution For Charging Of Vehicles Inaugurated
Nexperia 650V GaN FETs Enable 80 PLUS Titanium-class Power Supplies
EasyPACK CoolSiC MOSFET Module Supports Fast-switching DC-link Voltage Of 1500 V
II-VI Expands SiC Manufacturing In China
ASM AMICRA Unveils Industry’s First Manufacturing Systems Incorporating X-Celeprint’s MTP Technology
Pre-Switch Publishes Highest Efficiency Figures For 200kW Inverter
Keysight Announces GaN Test Board For Power Analyser
Henkel 3D Printing Facility Drives Sustainability By Achieving Zero Waste To Landfill Status
MKS Instruments Powers Its Way To Market Share Gains In 2020
Powerful IX7059 Heavy Duty Inspection System From Viscom Wins NPI Award
Open Source Power Delivery Software Enables Code Integration For USB System Differentiation
X-FAB Enhances Automotive Embedded Flash Offering
Imec And Aixtron Pave The Way For GaN To Enter SiC High Voltage Domain
UK To Establish Supply Chain For SiC And GaN Trench Devices
Nexperia Announces New ESD Protection Devices For High-speed Interfaces In Automotive Applications
New Drag And Drop Graphical User Interface For Ultra-fast Sensor Data Analytics
Infineon Launches New 1200V CoolSiC MOSFET
Mitsubishi Electric To Launch New X-Series HVIGBTs And HVDIODEs
SEMIKRON And Silicon Mobility Announce Collaboration

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification} Array
Live Event