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Toshiba Focuses On Power System Designs At Electronica Virtual 2020

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The Structure of SBD - Embedded MOSFET

Toshiba Electronics Europe GmbH announced that it will participate in the Electronica Virtual 2020 event. The company's virtual booth will showcase its latest innovations and emphasize its overriding passion for creating power solutions. Featuring finer lithographic technology, plus smaller and more reliable packaging solutions, these next generation solutions support the need for compact, feature-rich system designs that deliver elevated efficiency levels.

Industrial and Automotive applications are heavily reliant on advanced power semiconductors, and this will be underlined at Toshiba's virtual booth. Staff will be available to deal with design engineers queries in relation to a broad range of different challenges - such as increasing system reliability, reducing size and weight, addressing thermal management issues, migrating to 48V, etc.

One of the highlights of the virtual booth is Toshiba's new 1200V silicon carbide (SiC) MOSFET for high power industrial applications. Fabricated with Toshiba's second-generation device structure, the new SiC MOSFET offers enhanced operational reliability. When compared with an existing Toshiba 1200V silicon IGBT, the new device reduces turn-off switching losses by as much as 80% and switching time by up to 70%, while delivering low on-voltage characteristics with a drain current (ID) reaching 20A.

Toshiba will also be displaying its modular Servo Drive Reference Model for Multi-Channel Motor Control at its virtual booth. Combining leading-edge devices from the company's power and discrete product portfolios, such as UMOS-IV-H MOSFETs, small MOSFETs, LDOs and opto-couplers, plus optimized motor control MCUs, this platform provides highly efficient control and drive solutions for brushless DC (BLDC) motors. It is targeted at applications where accurate, energy efficient control is mandated, including Robots, Cobots and AGVs, as well as battery-powered products.


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