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Toshiba Expands Super Junction N-Channel MOSFET Series With Addition Of New 650V Devices

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Enhanced FoM capabilities help to significantly boost power supply efficiency levels

Toshiba Electronics Europe GmbH has introduced eight new super junction N-channel power MOSFETs to strengthen its latest DTMOSVI series - which has already gained a lot of market traction thanks to an excellent ratio of on-resistance and support for elevated switching speeds.

The 650V-rated TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z and TK210V65Z devices all possess highly appealing performance parameters. These MOSFETs present engineers with a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation. As a consequence, they can raise the efficiency of switch-mode power supplies by approximately 0.36 % - thereby enabling a substantial decrease in switching losses, compared to the previous generation.

The new MOSFETs are targeted at use in the switch-mode power supplies of a broad range of industrial equipment (including data center infrastructure, back-up power sources and the power conditioners of photovoltaic generators). They will allow major performance upgrades when replacing existing devices. The TK110Z65Z, TK125V65Z, TK170V65Z and TK210V65Z offer a Kelvin source pin for improved control and efficiency increase potential. The TK110N65Z and TK110Z65Z fit into TO-247 packages with 3/4 pin's, while the TK110A65Z, TK155A65Z and TK190A65Z come in fully isolated TO-220SIS packages. Finally, the TK125V65Z, TK170V65Z and TK210V65Z are all housed in an 8mm x 8mm DFN package format for surface mounting. This means DTMOSVI solutions can now be sourced whatever the specific board real estate requirements are.

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