News Article

Mitsubishi Announces 1200V SiC-MOSFET


Low power consumption and miniaturisation of power-supply systems, such as EV on-board chargers

Mitsubishi Electric has launched its N-series 1200V SiC-MOSFET featuring low power loss and high tolerance to self-turn-on. The new series will help to reduce the power consumption and miniaturise power supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers, photovoltaic power systems and more. Sample shipments will start this July.

Junction field effect transistor (JFET) doping technology reduces both switching loss and on-resistance, achieving an industry-leading2 figure of merit (FOM3) of 1,450mΩ·nC. Power consumption in power-supply systems is reduced by approximately 85% compared to using conventional Si-IGBTs.

By reducing mirror capacitance, self-turn-on tolerance improves by 14 times compared with competitor's products. Thus, fast switching operation can be realised and helps reduce switching loss.

Reduced switching-power loss enables the downsising and simplification of cooling systems as well as the downsising of peripheral components, such as reactor by driving the power semiconductor with a higher carrier frequency5, thereby helping to reduce the cost and sise of overall power-supply systems.

There are zix models for various applications including AEC-Q101 compliant models.

Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.

Imec Overcomes Fundamental Operation Challenge For Voltage-Controlled Magnetic Random-Access Memories (RAM)
Siltronic Strengthens GaN-on-Si Activities
CoolSiC Module Opens Up New Applications For SiC
Imec Demonstrates Excellent Performance Of Si FinFET CMOS Devices
GaN Systems Outlines Next 'GaN Systems Cup'
APEC 2021: Recruiting Qualified Tech Paper Reviewers
EPC And VPT Launch Joint Space Venture
New Rohm SiC MOSFETs Featuring The Industry’s Lowest ON Resistance
New Silicon Carbide Power Module For Electric Vehicles
Cambridge GaN Devices Leads €10.3M European Project
Mitsubishi Announces 1200V SiC-MOSFET
Toshiba Expands Super Junction N-Channel MOSFET Series With Addition Of New 650V Devices
Toshiba Releases Industry’s First High-Speed Communications Photocouplers That Can Operate From A 2.2V Supply
Microchip Delivers The Smallest Automotive MaXTouch Controllers For Smart Surfaces And Multi-function Displays
Siemens Supports Sustainable Urban Transport With EBus Charging Infrastructure In Nuremberg
GaN And SiC Power Semi Markets To Pass $1B In 2021
EPC To Present On GaN At Virtual PCIM
Deltaray Enables Zero-defect Product Manufacturing For Medical Devices, Pharmaceutical And Automotive Industries
II-VI Licenses SiC Technology From GE
Allegro Releases World’s Most Accurate 400 KHz Current Sensor IC With 5 KV Isolation Rating
Communication Without Mask
Tektronix And A2LA Partner On Ventilator Production By Reconfiguring And Accrediting Torque Tools
Yole Releases SiC And GaN Update
Performance Improved And Space Gained

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: