Info
Info
News Article

Power Block MOSFET From Diodes Incorporated Increases Power Converter Efficiency And Saves PCB Space

News

Diodes Incorporated announced the availability of the first in a new generation of discrete MOSFETs. The DMN3012LEG delivers increased efficiency in a smaller package to provide significant cost, power, and space savings in a wide variety of power conversion and control applications.

The DMN3012LEG integrates dual MOSFETs in a single package measuring just 3.3mm x 3.3mm and reduces the board space requirement by up to 50% compared to a typical two-chip solution. This space saving benefits a range of applications using point of load (PoL) and power management modules. The DMN3012LEG can be used in DC-DC synchronous buck converters and half-bridge power topologies to reduce the size of power converter solutions.

The 3D structure of the PowerDI 3333-8 Type D package helps to increase overall power efficiency, while the high voltage and current ratings make it widely applicable. The fully-grounded pad design delivers good thermal performance, allowing the total solution to run cooler. The high switching speeds and efficiency of the process used also minimize the need for large inductors and capacitors.
The DMN3012LEG integrates two N-channel enhancement mode MOSFETs, making it well suited for synchronous buck converter designs. Using a lateral diffused MOS (LDMOS) process, it combines fast turn-on and turn-off delay speeds of 5.1nS and 6.4nS for Q1, and 4.4nS and 12.4ns for Q2. The device has maximum on-resistance (RDS(ON)) figures of just 12mΩ at Vgs=5V for Q1 and 6mΩ at Vgs=5V for Q2. The DMN3012LEG can accept a 30V drain-source voltage with 10V gate-source, while supporting 5V gate drive.

Performance Improved And Space Gained
GaN Systems Outlines Next 'GaN Systems Cup'
New Rohm SiC MOSFETs Featuring The Industry’s Lowest ON Resistance
Imec Overcomes Fundamental Operation Challenge For Voltage-Controlled Magnetic Random-Access Memories (RAM)
CoolSiC Module Opens Up New Applications For SiC
Toshiba Expands Super Junction N-Channel MOSFET Series With Addition Of New 650V Devices
APEC 2021: Recruiting Qualified Tech Paper Reviewers
Imec Demonstrates Excellent Performance Of Si FinFET CMOS Devices
Mitsubishi Announces 1200V SiC-MOSFET
Tektronix And A2LA Partner On Ventilator Production By Reconfiguring And Accrediting Torque Tools
Siltronic Strengthens GaN-on-Si Activities
Yole Releases SiC And GaN Update
Cambridge GaN Devices Leads €10.3M European Project
GaN And SiC Power Semi Markets To Pass $1B In 2021
Allegro Releases World’s Most Accurate 400 KHz Current Sensor IC With 5 KV Isolation Rating
Communication Without Mask
Deltaray Enables Zero-defect Product Manufacturing For Medical Devices, Pharmaceutical And Automotive Industries
EPC To Present On GaN At Virtual PCIM
Microchip Delivers The Smallest Automotive MaXTouch Controllers For Smart Surfaces And Multi-function Displays
EPC And VPT Launch Joint Space Venture
II-VI Licenses SiC Technology From GE
New Silicon Carbide Power Module For Electric Vehicles
Siemens Supports Sustainable Urban Transport With EBus Charging Infrastructure In Nuremberg
Toshiba Releases Industry’s First High-Speed Communications Photocouplers That Can Operate From A 2.2V Supply

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}