+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
{megaLeaderboard}
{normalLeaderboard}
News Article

HZZH Power Module Uses Transphorm GaN

News

98 percent efficient power module uses TPH3205WS GaN devices in an interleaved bridgeless totem-pole PFC

Transphorm has confirmed that Hangzhou Zhongheng Electric Co., Ltd (HZZH) has developed an ultra-efficient, GaN-based power module. The 3 kW ZHR483KS uses Transphorm's GaN devices to reach 98 percent efficiency.

According to the company, OEMs can swap the ZHR483KS—which offers standardised output connector configurations—with existing same-wattage power modules to achieve a high reliability, higher performing solution at a lower overall system cost.

The ZHR483KS is HZZH's first GaN-based power solution and is the flagship product for a new product line. The module's input voltage ranges from 85 V to 264 V, while its output voltage ranges from 42 V to 58 V. Transphorm's TPH3205WS GaN devices are used in an interleaved bridgeless totem-pole PFC to achieve 98 percent efficiency at half load. The GaN devices lower the power module's switching and driving losses, leading to the ZHR483KS outperforming preceding modules that used superjunction Silicon MOSFETs.

“We sought a power transistor that would enable us to develop a more efficient yet cost-effective solution for our customers,” said Dr Guo, CTO, HZZH. “We considered SiC devices but could not achieve the desired advantages at low voltages. We then vetted several GaN manufacturers' devices, and ultimately selected Transphorm's GaN FETs due to their reliability, device cost, and simple implementation.”

Transphorm's GaN FETs are two-chip normally-off devices available in standard TO-XXX packages and PQFN modules that can be driven with common off-the-shelf drivers. The current Gen III family offers the GaN semiconductor industry's highest threshold voltage at 4 V and highest gate robustness at ±20 V. These features enable customers to easily design in highly reliable GaN solutions to gain the technology's high-power density benefits.

“Transphorm develops each generation of its GaN platform with four key factors in mind: reliability, drivability, designability, and reproducibility,” said Kenny Yim, VP of Asia sales, Transphorm. “We're proud that HZZH selected us as its GaN partner as it affirms that those four factors are what our customers need to disrupt their markets. They result in our GaN being designed into a wide range of multi-kilowatt power systems that are setting industry records. We anticipate HZZH will continue to innovate as our collaboration continues on future products.”

Power Electronics International to return to Brussels – Inaugral event.


The first power electronics conference and exhibition will bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.


Join us face-to-face on 18-19 April 2023

  • View the agenda.
  • 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: CS International and PIC International.
  • Email info@pe-international.net  or call +44 (0)24 7671 8970 for more details.

Register


{inStory3}
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: