Info
Info
News Article

HZZH Power Module Uses Transphorm GaN

News

98 percent efficient power module uses TPH3205WS GaN devices in an interleaved bridgeless totem-pole PFC

Transphorm has confirmed that Hangzhou Zhongheng Electric Co., Ltd (HZZH) has developed an ultra-efficient, GaN-based power module. The 3 kW ZHR483KS uses Transphorm's GaN devices to reach 98 percent efficiency.

According to the company, OEMs can swap the ZHR483KS—which offers standardised output connector configurations—with existing same-wattage power modules to achieve a high reliability, higher performing solution at a lower overall system cost.

The ZHR483KS is HZZH's first GaN-based power solution and is the flagship product for a new product line. The module's input voltage ranges from 85 V to 264 V, while its output voltage ranges from 42 V to 58 V. Transphorm's TPH3205WS GaN devices are used in an interleaved bridgeless totem-pole PFC to achieve 98 percent efficiency at half load. The GaN devices lower the power module's switching and driving losses, leading to the ZHR483KS outperforming preceding modules that used superjunction Silicon MOSFETs.

“We sought a power transistor that would enable us to develop a more efficient yet cost-effective solution for our customers,” said Dr Guo, CTO, HZZH. “We considered SiC devices but could not achieve the desired advantages at low voltages. We then vetted several GaN manufacturers' devices, and ultimately selected Transphorm's GaN FETs due to their reliability, device cost, and simple implementation.”

Transphorm's GaN FETs are two-chip normally-off devices available in standard TO-XXX packages and PQFN modules that can be driven with common off-the-shelf drivers. The current Gen III family offers the GaN semiconductor industry's highest threshold voltage at 4 V and highest gate robustness at ±20 V. These features enable customers to easily design in highly reliable GaN solutions to gain the technology's high-power density benefits.

“Transphorm develops each generation of its GaN platform with four key factors in mind: reliability, drivability, designability, and reproducibility,” said Kenny Yim, VP of Asia sales, Transphorm. “We're proud that HZZH selected us as its GaN partner as it affirms that those four factors are what our customers need to disrupt their markets. They result in our GaN being designed into a wide range of multi-kilowatt power systems that are setting industry records. We anticipate HZZH will continue to innovate as our collaboration continues on future products.”

European SiC Conference Delayed For A Year
Citroën Reveals Its All-electric ë-Dispatch
Volvo XC40 Recharge Pure Electric Available To Order In UK
Microchip Switchtec PAX Advanced Fabric Gen 4 PCIe Switches Released To Production
Gartner Names GaN Systems A 'Cool Vendor'
Taiwan Semiconductor Rectifiers With Wettable Flank Contacts Offers Best-in-Class (8A/1kV) Specifications
Infineon Introduces CoolSiC MOSFET Eval Board
UK Shift To Pedal Power Creates Boom In EBike Kit Sales
FEV To Commission New Battery Test Centre In Germany
VisIC And ZF To Work On 400V Electric Drivelines
Ducati And MT Distribution Together For Urban Mobility
EPC CEO To Present GaN Webinar
“The PCIM Europe Digital Days”: Program And Registration Online
Arrow Electronics, Panasonic Industry, And STMicroelectronics Join Forces To Deliver IoT Modules For Smart Applications
Mercedes-Benz’s Global Battery-production Network Grows
StrongIRFET™ MOSFETs In D²PAK 7pin+ Package Targeted At Battery-powered Applications
Greencoat Solar To Acquire 156MW Portfolio From BlackRock Real Assets And Lightsource Bp
Shimano Launches Three New Batteries For E-bikes
Volkswagen Invests In Battery Operations At Salzgitter
WiPDA-Asia To Take Place Virtually And Physically
Power Block MOSFET From Diodes Incorporated Increases Power Converter Efficiency And Saves PCB Space
Modular Evaluation Platform For Discrete CoolSiC MOSFETs Allows Testing Of Different Driving Options
TROPOS Delivers First Electric Compact Utility Vehicle
Nissan Zero Emission Ambulance Becomes Part Of ‘Zero Emission Tokyo’ Initiative

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}