News Article

Infineon Announces 650V SiC MOSFETs


CoolSiC devices address growing demand for energy efficiency, power density, and robustness

Infineon Technologies is expanding its SiC product portfolio with 650 V devices. With the newly launched CoolSiC MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Amongst them are server, telecom and industrial SMPS, solar energy systems, energy storage and battery formation, UPS, motor drives as well as EV-charging.

“With this launch, Infineon complements its broad silicon, SiC, and GaN-based power semiconductor portfolio in the 600 V / 650 V power domain,” said Steffen Metzger, senior director high voltage conversion at Infineon's Power Management & Multimarket Division. “It underlines our unique position in the market being the only manufacturer with such a broad offering for all three power technologies. Additionally, the new CoolSiC family supports our claim to be the number 1 supplier of SiC MOSFET switches for industrial purposes.”

The CoolSiC MOSFET 650 V devices are rated from 27 mΩ to 107 mΩ. They are available in classic TO-247 3-pin as well as TO-247 4-pin packages, which allows for even lower switching losses. As for all previously launched CoolSiC MOSFET products, the new family of 650 V devices are based on Infineon's state-of-the-art trench semiconductor technology. Maximising the strong physical characteristics of SiC, this ensures that the devices offer superior reliability, best-in-class switching and conduction losses. Additionally, they feature highest transconductance level (gain), threshold voltage (V th) of 4 V and short-circuit robustness.

650 V CoolSiC MOSFETs are said to offer many benefits in comparison to other silicon and SiC solutions such as switching efficiency at higher frequencies and high reliability. Thanks to the low on-state resistance (R DS(on)) dependency on temperature they feature an excellent thermal behaviour. The devices also have body diodes retaining a low level of reverse recovery charge (Q rr), roughly 80 percent less compared to the best superjunction CoolMOS MOSFET. The commutation-robustness helps in achieving very easily an overall system efficiency of 98 percent, e.g. through the usage of continuous conduction mode totem-pole power factor correction (PFC).

To ease the application design using CoolSiC MOSFETs 650 V and to ensure high performance operation of the devices, Infineon offers dedicated 1-channel and 2-channel galvanically isolated EiceDRIVER gate-driver ICs. This solution - combining CoolSiC switches and dedicated gate-driver ICs - helps lowering system costs as well as total cost of ownership and enables energy efficiency gains. The CoolSiC MOSFETs also work seamlessly with other ICs from Infineon's EiceDRIVER gate-driver family.

NSK Develops Ultra-high-speed Ball Bearing For EV Motors
High-frequency GaN Transistors Achieve Record Efficiency At 100V
HZZH Power Module Uses Transphorm GaN
MAHLE Powertrain Opens New Facility To Streamline EV Battery Development
ABB Completes Acquisition Of Chinese EV Charging Provider Chargedot
ACM Research Launches Stress-Free Polishing Tool For Advanced Packaging Applications; Delivers First Tool To Leading Chinese OSAT
AKASOL Adds New Battery Production Line At Its Facility In Germany
Toshiba Announces A New Dual Output IGBT / MOSFET Driver
Newport Chosen By UK Government To Help Lead UK Electric Revolution
Toshiba To Supply SCiB Rechargeable Battery For Nissan And Mitsubishi Hybrids
Power Integrations’ SCALE-iDriver For SiC MOSFETs Achieves AEC-Q100 Automotive Qualification
Infineon Withdraws Outlook For FY20
Microchip Expands SiC Family
GT Advanced Technologies And ON Semiconductor Sign Agreement For Production And Supply Of Silicon Carbide Material
96 Percent Efficiency; 33 Percent Smaller
APEX AP-0 Concept EV Sports Car Revealed
Infineon Expands 1200V CoolSiC Diode Family
Coronavirus: ENERGY STORAGE EUROPE 2020 Postponed
Efinix’s Trion FPGA Silicon Platform Expands Into Europe
GTAT And ON Semi Sign SiC Agreement
Tektronix And Coherent Solutions Announce Exclusive Partnership Providing Fully-Integrated Optical Communications Platforms
Siemens Unveils UK’s First Residential Avenue Fully Converted To Provide Lamppost EV Charging Points
Pre-Switch Demonstrates Efficacy Of AI-based Soft Switching Using 200kVA Inverter Reference
Protect Against Rootkit And Bootkit Malware In Systems Booting From External SPI Flash Memory

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: