GaN and SiC Power Semiconductor Market to Reach $3bn by 2025
Comprising mainly of gallium nitride (GaN) and silicon carbide (SiC), wide bandgap semiconductor (WBG) addresses high-end power density requirements. In consequence, players in GaN & SiC power semiconductor market have been vying with one another to provide higher switching frequencies, lower losses, high breakdown voltages and robustness in hostile environments, thereby leading to surge in the industry share.
With higher voltage and higher efficiency, automakers are saving on cost, maintenance and weight, while enhancing reliability. As such, GaN and SiC components are highly sought-after over semiconductor technologies such as silicone (Si) metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors.
Using SiC devices ultimately results in cost savings from reduced space requirements, lower battery costs, and simpler cooling measures, despite the additional upfront cost.
With myriad power supply operations demanding GaN & SiC components, adoption of the devices in sectors such rail traction, electric vehicles, and automotive electronic has increased, instilling confidence among players in GaN and SiC power semiconductor market.When it comes to embracing IoT and connected devices, affluent countries such as the U.S. are leaving no stone unturned. Telecommunication sector—5G technology—tends to influence power semiconductor industry. With the U.S. at the helm, Japan, South Korea and China are taking audacious steps toward embracing 5G technology.
Companies across the aforementioned countries are looking forward to expand their 5G capabilities, which is bound to provide a lucrative boost to the regional GaN and SiC power semiconductor industry outlook. For example, SK Telecom in South Korea acquired spectrums of 3.5 GHz and 28 GHz frequencies for the deployment of 5G network. Further, China Academy of Information and Communications Technology expects number of 5G connections in China to surpass 400 million by 2025.
PV inverters play an indispensable role in converting sunlight into electricity as the SiC embedded PV inverters propels the system efficiency and incurs lower switching losses. Experts opine that use of SiC devices for the PV inverter applications ameliorates the power density by reducing heat dissipation and size of passive components.
Sustained efforts by countries such as India and China to increase the use of renewable energy have instilled confidence among preeminent players in GaN and SiC power conductor market. The Government of India announced in September 2019 that India erected 195 solar panels on the terrace of UN. Meanwhile, according to the Ministry of New and Renewable Energy in India, the country of 1.3 billion population is gearing to have 175 GW solar energy in 2022.
These favorable initiatives undertaken by governments are expected to play an instrumental role in the uplifting of GaN & SiC power semiconductor industry landscape.
With product diversification taking center stage, manufacturers are contemplating product portfolio expansion. Of late in May 2019, Infineon announced the roll out of its much anticipated 650 V CoolSiC MOSFET devices and are gearing to go into mass production. On the other hand, Microsemi announced the roll out of new SiC products—700 V Schottky Barrier Diode Devices & 1,200 V SiC MOSFET—which are expected to have positive influence in the growth of GaN and SiC power conductor market share.
Read More information: https://www.gminsights.com/industry-analysis/gan-and-sic-power-semiconductor-market
