Info
Info
News Article

Transphorm Adds More GaN FETs To Gen III Line

News

New surface mount devices address interest in reliable high voltage GaN in many applications

Transphorm has announced its first Gen III PQFN88 transistors. The new 650V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab),and offer an on-resistance of 72 milliohms.

Launched in June 2018, Transphorm's Gen III devices came onto the market as high quality, high reliability [Q+R] GaN FETs. They pair a custom-designed low-voltage MOSFET with the GaN FET to offer: quiet switching, high performance at increased current levels with minimal external circuitry, increased noise immunity (threshold voltage at 4 V), and increased gate robustness (at +/- 20 V).

The Gen III drain and source PQFN88 packages include wider pins for increased board level reliability (BLR), which increases the reliability of multi-layer PCB designs. Offering the drain and source tab configurations also accommodates both high and low side switch locations. This provides increased radiated immunity as the large pad is soldered to the non-switching node. Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface mount applications using Transphorm's latest technology.

“Our focus continues to be on increasing GaN FET reliability while delivering higher power density,” said Philip Zuk, VP of technical marketing worldwide and North America sales, Transphorm. “As market interest in high voltage GaN technology continues to grow, we also aim to arm our customers with device options that fit each potential application. To that end, the introduction of the 72 milliohm source and drain PQFN88 devices allows us to meet all three objectives as we fill out our current product family.”

GaN And SiC Power Semi Markets To Pass $1B In 2021
APEC 2021: Recruiting Qualified Tech Paper Reviewers
II-VI Licenses SiC Technology From GE
Presto Engineering Moves To New Facility In Caen For Enhanced Engineering And Production Capabilities
Heraeus Launches New Bonding Ribbon For SiC Modules
BMW Group Sources Sustainable Cobalt Worth Around €100 Million From Morocco
SAIC-GM-Wuling Builds Energy Storage Power Station From Retired EV Batteries
Rohm And Leadrive Establish Joint Lab For SiC Automotive Modules
Allegro Releases World’s Most Accurate 400 KHz Current Sensor IC With 5 KV Isolation Rating
CoolSiC For Ultra-fast Pit Stops ...
Mercedes-Benz Announces Strategic Partnership And Equity Stake In Battery Cell Manufacturer Farasis
Toshiba Expands Super Junction N-Channel MOSFET Series With Addition Of New 650V Devices
Yole Releases SiC And GaN Update
EPC And Microchip Co-Develop DC-DC Demo Board
Tektronix And A2LA Partner On Ventilator Production By Reconfiguring And Accrediting Torque Tools
Toshiba Releases Industry’s First High-Speed Communications Photocouplers That Can Operate From A 2.2V Supply
CoolSiC Module Opens Up New Applications For SiC
British Gas Makes Largest UK Commercial EV Order With Vauxhall
Communication Without Mask
EPC To Present On GaN At Virtual PCIM
Deltaray Enables Zero-defect Product Manufacturing For Medical Devices, Pharmaceutical And Automotive Industries
University Of Antwerp And Imec Launch Crowdscan
Microchip Delivers The Smallest Automotive MaXTouch Controllers For Smart Surfaces And Multi-function Displays
New Silicon Carbide Power Module For Electric Vehicles

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}