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Transphorm Adds Second FET To 900V GaN Range

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New generation III GaN-on-Si FETs designed for powering three-phase broad industrial power supplies and automotive converters

Transphorm has introduced its second 900V FET, the Gen III TP90H050WS. These devices now enable three-phase industrial systems and higher voltage automotive electronics to leverage GaN's speed, efficiency and power density. Further, the new FET's platform is based on Transphorm's 650V predecessor, the only JEDEC- and AEC-Q101-qualified HV GaN technology. As such, system developers can design with confidence in its quality and reliability.

The TP90H050WS has a typical on-resistance of 50 mOhm with a 1000 V transient rating, offered in a standard TO-247 package. The TP90H050WS can reach power levels of 8 kW in a typical half bridge while maintaining greater than 99 percent efficiencies. Its figures of merit for Ron*Qoss (resonant switching topologies) and Ron*Qrr (hard switching bridge topologies) are two to five times less than those of common superjunction technologies in production—indicating highly reduced switching losses. While a JEDEC qualified version is slated for Q1 2020, customers can design 900V GaN power systems today.

Transphorm's first 900V device, the TP90H180PS, with a typical on-resistance of 170 mOhm in a TO-220 package is JEDEC qualified and has been available through Digi-Key since 2017. It can reach a peak efficiency of 99 percent, demonstrating its suitability for 3.5 kW single-phase inverters.

“Transphorm's latest 900V GaN product represents a major milestone for commercial GaN power transistors as it reaches the 1 kilovolt mark, an industry first. This paves the way for GaN to be a viable choice at these higher voltage nodes,” said Primit Parikh, co-founder and COO, Transphorm. “With partial funding from ARPA-E for early risk reduction and Power America for initial product qualification, this effort represents successful public-private partnership that accelerates GaN's market adoption.”

Transphorm's 900V platform provides higher breakdown levels for systems already targeted by the company's 650V FETs, such as renewables, automotive, and various broad industrial applications. It is designed to be deployed in bridgeless totem-pole power factor correction (PFC), half-bridge configurations used in DC to DC converters and inverters. The ability to support these topologies at a higher voltage expands Transphorm's target applications to now include a broad list of three-phase industrial applications, such as uninterruptible power supplies and automotive chargers/converters at higher battery voltage nodes.

“900V GaN power devices eliminate barriers to access applications not presently supported with GaN semiconductors. With innovations like this 900V platform, Transphorm is advancing the industry, creating new customer opportunities,” said Victor Veliadis, deputy executive director and CTO of PowerAmerica, which partially funded the project.

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