News Article

Wolfspeed To Demo GaN MMICs In Boston


Live demos cover C-IED, satcom, S and X-band radar, and cellular basestation applications

At IMS2019 (June 4 — June 6, 2019 in Boston), Wolfspeed will be showing its latest GaN on SiC and LDMOS parts, and running a series of live demonstrations on each day of the show.

Tuesday, June 4th

Broadband GaN MMIC Power Amplifier for 32V C-IED Applications

Using Wolfspeed's GaN technology the CMPA2060035F provides a compact solution for C-IED (counter-improvised explosive devices) applications spanning 2.0 -6.0 GHz. With a fully matched 50 ohm multi stage MMIC housed in a compact 0.5in leaded package system complexity can be reduced while maintaining competitive performance. Applications include C-IED and ISM.

Mid Ku-Band GaN MMIC PA for SatCom Applications

With 500 MHz video bandwidth the CMPA1D1E080F provides an industry leading and reliable solution for tube replacements for satellite communication. The three-stage design provides ample gain while maintain linearity across the band. Applications include satellite communications and sadio links.

Wednesday, June 5th

63W avg, 3.6-3.8 GHz High Efficiency Doherty GaN Transistor

Designed for use in Band 43 cellular systems, this component is the highest power and efficiency 3.5 GHz 40W solution on the market. Applications include: ellular base station transmitter amplifiers.

Broadband GaN MMIC Power Amplifier for 28V X-Band Radar Applications

With a three stage design the CMPA901A035F provides a high gain and output power solution at x-band using Wolfspeed's industry leading GaN technology. The high PAE at these frequencies combined with a ceramic package allows the flexibility for this device to operate CW for applications outside radar. Applications include: X-band military radar, marine radar, weather radar and medical applications.

Thursday, June 6th

120W Multi-Stage Application Fixture for S-Band Radar

With a thermally capable package the new CGHV35120F allows the end user to operate the device at high case temperatures (85C) while still meeting output power and efficiency requirements for air and naval based S-band radar systems. In conjunction with the CMPA2735015S the overall gain from driver to output stage is well over 45dB and with the pre-driver operating at 50V overall system complexity and size can be reduced. Applications include S-band radar.

Troposcatter Tactical Radio Reference Design

The CGHV1F025S-AMP4 application fixture combines two surface mount unmatched devices to provide over 50W of power from 4.4 - 5.0 GHz. With measured EVM less than 3 percent under OQPSK signal the fixture is able to meet harsh linearity requirements for Troposcatter tactical radio applications. Applications include satellite communications and radio links.

NEDO, Sharp, And Toyota Trials Electrified Vehicles Equipped With Solar Batteries
EV Group Earns Seventh Triple Crown Win In Customer Satisfaction Survey
Oxford Instruments Launches ALD Manufacturing Solution For GaN Power Device Passivation
SiC And GaN-based Power Electronics To Boost Automotive Semiconductor Efficiencies And Profitability
Fraunhofer IAF Enhances Functionality Of GaN Power ICs With Integrated Sensors
Ascatron Secures €3.5 Million For SiC Product Development
Packaging Solution For GaN On Silicon Power Devices
ROHM Power Supply Monitoring IC With Built-In Self-Diagnostic Function
Loughborough Expert Helps Construct New United Nations Specifications
Transphorm Adds Second FET To 900V GaN Range
China, India, Japan And South Korea Set To Surpass 1 Billion Installed Smart Electricity Meters In 2025
Q CELLS Offers Businesses Direct Marketing Of Solar Power In Germany
Scatec Solar Reaches Financial Close For 55 MW Project In Ukraine
MagnaChip Introduces New Component To Enhance 5G/LTE Smartphone Battery Life
Lidl To Invest €1m In Ireland’s Largest Ever Installation Of Solar Panels
GaN And SiC Require A New Approach To Packaging
Technology And Smarter Charging Solutions Key To Mass Adoption Of EV
Amtech COO Talks About Growing SiC Opportunities
Navitas Earns Innovation Award For GaNFast Power ICs
GaN And SiC Power Semis Worth $3 Billion By 2025
Sanan IC Expands Wafer Foundry Portfolio With 150 Mm GaN-on-silicon Process
Power Electronics For The Energy Transformation
ABB To Exit Solar Inverter Business
ABB Helps Build A Brighter Future For Costa Rica With High Power Inverter Technology

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: