Info
Info

GEN2 650V SiC Schottky Diodes Offer Improved Efficiency

News

Littelfuse has introduced two second-generation series of 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). They offer power electronics system designers a variety of performance advantages, including negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175°C, so they are ideal for applications that require enhanced efficiency, reliability, and thermal management.

When compared to standard silicon PN-junction diodes, the 650V Series SiC Schottky Diodes support dramatic reductions in switching losses and substantial increases in the efficiency and robustness of a power electronics system. Because they dissipate less energy and can operate at higher junction temperatures than Si-based solutions, they allow for smaller heat sinks and a smaller system footprint. This provides end-users with all the advantages of more compact, energy-efficient systems and the potential for a lower total cost of ownership.

Typical applications for 650V Series SiC Schottky Diodes include:

• power factor correction (PFC),

• buck/boost stages in DC-DC converters,

• free-wheeling diodes in inverter stages,

• high-frequency output rectification and

• electric vehicle (EV) applications.

“These new series are our first 650V SiC Schottky Diode offerings; all our previous releases were 1200V-rated devices, so we can now address a wider range of applications and further complement the Littelfuse SiC MOSFET portfolio,” said Christophe Warin, Silicon Carbide Product Marketing Manager, Semiconductor Business Unit at Littelfuse. “Their AEC-Q101 qualification puts these diodes in a higher class than similar devices in terms of quality and reliability.”

The 650V Series SiC Schottky Diodes offer these key benefits:

• AEC-Q101-qualified diodes exhibit exceptional performance in demanding applications.

• Far lower switching losses than silicon bipolar diodes and fast, temperature-independent switching behavior make these devices suitable for high-frequency power switching.

• The positive temperature coefficient enables safe operation and ease of paralleling.

• The 175°C maximum operating junction temperature provides a larger design margin and relaxed thermal management requirements.


LONGi Launches New 5GW Mono Module Plant, Increases Supply Capacity
NORD/LB And BayWa R.e. Close Financing For Three Italian 66 MW Wind Farms
ABB Helps Establish BP’s Pilot DC Fast Charging Station In China
JEDEC WBG Committee Publishes First Document
ACEINNA Launches High Accuracy Current Sensors Based On AMR Technology
Innovative Direct Current Meter For Fast Charging Stations From Isabellenhütte And Innogy
A New Generation Of Power Electronics Will Make Electric Cars More Efficient
Frost & Sullivan Recognises GaN Systems With Innovation Award
VisIC Releases 6.7kW Charger Reference Design
ROHM Offers The Industry’s Largest* Lineup Of Automotive-Grade SiC MOSFETs
Rohm Extends Automotive SiC MOSFET Line
Dialog Semiconductor To Acquire Silicon Motion’s Mobile Communications Business
Is The UK Really Ready For An Electric Vehicle Rollout?
AEG Licensing SEMAG To Manufacture Industrial-grade Solar Inverters
Aveox Partners With GaN Systems On Aerospace Modules
Škoda To Install Nearly 7,000 EV Charging Points At Its Czech Factories
Infineon Manufactures 1000 A Voltage Regulator Solution For Next Generation AI And 5G Networking
BP Chargemaster And Swarco UK Receive Contracts To Install EV Charging Points From Highways England
EPC 100V EGaN Device Is 97 Percent Efficient
GaN Systems Debuts New Power Transistors
EPC To Show Latest GaN Technology At APEC 2019
SiC Adoption Is Accelerating Says Yole
JLR Installs UK’s Largest Smart EV Charging Facility
GEN2 650V SiC Schottky Diodes Offer Improved Efficiency

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info