Sanan IC Announces 6-Inch SiC Process


SiC process offers device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes

Sanan IC, a pure-play Chinese compound
semiconductor wafer foundry, has announced that it has achieved full process
qualification for commercial release of its 6- SiC technology to add to its
foundry services portfolio.

With the ability to ensure its supply chain,
the company says it provides a dedicated capacity for its 6-inch SiC wafer
processing services on top of its III-V compound manufacturing for GaAs,
GaN, and InP.

“We are delighted to expand our wafer foundry
services to now include SiC and make it commercially available to the wide
bandgap semiconductor market world-wide”, said Raymond Cai, CEO of Sanan IC.
“We see tremendous business opportunities in serving the high growth power
electronics market with SiC displacing silicon solutions due to its higher
efficiency, higher switching frequency, and higher temperature characteristics.
The enormous growth of the automotive, big data, renewable clean energy, and
power utility industries has created opportunities for us to offer SiC foundry
services to the global market. Leveraging our state-of-the-art manufacturing
plants, robust supply chain, and worldwide team of industry veterans makes
Sanan IC the ideal foundry partner”.

Sanan IC's SiC process technology offers
device structures for 650V, 1200V and higher-rated Schottky Barrier Diodes
(SBD), to soon be followed by a SiC MOSFET process for 900V, 1200V, and higher.
SiC SBDs and SiC MOSFETs, due to higher performance, are emerging for power
conversion applications starting from 650V. Given the superior properties of
SiC over silicon in terms of higher efficiency, increased power density, higher
switching frequency, higher temperature, higher breakdown strength, more
compact and lighter system design, several applications have started to embrace
this technology.

The adoption of SiC has accelerated into
multiple markets such as in photovoltaic solar cells, industrial motor drives,
power factor correction (PFC) for enterprise server, telecom base station power
supplies. In electric vehicles (EV) and hybrids (HEV), SiC is widely used on
the on-board charger (OBC), power train inverters, and DC/DC converters.

According to Yole Développement , the SiC
power device semiconductor market is forecasted to have a value over $1.5B by
2023 with a compound annual growth rate (CAGR) of 31 percent from 2017 to 20231. Sanan
IC is poised to meet the customers' demands for quality, volume, ramp, and

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