Info
Info
News Article

Allos Customers Confirm Benefits Of GaN-on-Si Process

News

Absence of C-doping reduces switching losses at high frequencies by reducing electron-trapping effects

Dresden-based GaN-on-Si technology licensing firm Allos Semiconductor has announced customer feedback on the outstanding wafer-level data, excellent dynamic Ron and high temperature performance of its GaN-on-Si technology.

It confirms the benefits of avoiding carbon-doping according to Allos' co-founder and CTO Atsushi Nishikawa who showed the data and the underlining analysis at an invited talk at the E-MRS scientific conference in Warsaw.

Being able to make this proof is important for the high power electronics industry because it confirms the widespread believe that the absence of C-doping can help reduce switching losses at high frequencies (dynamic Ron) by reducing electron-trapping effects. Nevertheless, C-doping is usually unavoidable to achieve the required breakdown voltage but it causes lower crystal quality and with that more trapping and reliability issues.

Allos has therefore overcome this challenge of delivering other crucial performance parameters at the same time by showing - on the same epiwafer not only good dynamic Ron - but also the renowned good crystal quality and extremely low leakage of Allos.

Nishikawa explains: “In epitaxy you often need to work with trade-offs between different criteria and thus it is really a big success to achieve all required specification parameters at the same time”.

Figure 1 shows the relationship of critical electric field and dynamic on-resistance (black data points are referred from Würfl et al., IEDM 13-144 (2013)).

“It is Allos' value proposition to deliver a technology platform addressing all required spec parameters at the same time to enable our customers to make such epiwafers themselves after a technology transfer from us in only 12 weeks” is added by Alexander Loesing, cofounder and CMO of Allos.

In addition to excellent dynamic Ron and leakage performance, the 150 and 200 mm epiwafers have controlled and flat bow - and through the availability in SEMI-standard thicknesses, the epiwafers are suitable for processing in high volume CMOS lines.

Based on its business model, Allos continues making its epiwafer technology available to high power electronic companies who would like to enter the GaN-on-Si business and avoid the cost, risk and uncertainty of starting their own epi development from scratch.

“At the same time also customers who already have an ongoing GaN-on-Si activity can benefit. In some cases they are not yet completely happy with their performance or want to increase the voltage range of their products to 1200 V”, adds Loesing and he further cites that in particular wafer breakage is a key problem still faced by many. Focusing on the low risk which Allos offers its customers by guaranteeing the performance delivered in a technology transfer, he adds: “And of course customers can test the technology easily by buying epiwafer samples from us.”

MagnaChip Introduces New Component To Enhance 5G/LTE Smartphone Battery Life
Loughborough Expert Helps Construct New United Nations Specifications
NEDO, Sharp, And Toyota Trials Electrified Vehicles Equipped With Solar Batteries
Scatec Solar Reaches Financial Close For 55 MW Project In Ukraine
Power Electronics For The Energy Transformation
EV Group Earns Seventh Triple Crown Win In Customer Satisfaction Survey
Sanan IC Expands Wafer Foundry Portfolio With 150 Mm GaN-on-silicon Process
Oxford Instruments Launches ALD Manufacturing Solution For GaN Power Device Passivation
Transphorm Adds Second FET To 900V GaN Range
Packaging Solution For GaN On Silicon Power Devices
ABB To Exit Solar Inverter Business
Technology And Smarter Charging Solutions Key To Mass Adoption Of EV
ROHM Power Supply Monitoring IC With Built-In Self-Diagnostic Function
Fraunhofer IAF Enhances Functionality Of GaN Power ICs With Integrated Sensors
GaN And SiC Require A New Approach To Packaging
Ascatron Secures €3.5 Million For SiC Product Development
Navitas Earns Innovation Award For GaNFast Power ICs
Q CELLS Offers Businesses Direct Marketing Of Solar Power In Germany
Lidl To Invest €1m In Ireland’s Largest Ever Installation Of Solar Panels
Amtech COO Talks About Growing SiC Opportunities
ABB Helps Build A Brighter Future For Costa Rica With High Power Inverter Technology
SiC And GaN-based Power Electronics To Boost Automotive Semiconductor Efficiencies And Profitability
GaN And SiC Power Semis Worth $3 Billion By 2025
China, India, Japan And South Korea Set To Surpass 1 Billion Installed Smart Electricity Meters In 2025

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info