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InnoScience Powers GaN Development With Aixtron

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AIX G5+ C high-volume manufacturing platform paves way to high-performing 650V GaN-on-Si devices

Aixtron SE will deliver multiple AIX G5+ C MOCVD systems to InnoScience Technology (China) for the development of GaN power devices. All Aixtron cluster tools will feature a 5x200 mm configuration and will be shipped until Q2/2019.

Innoscience Technology was co-founded in December 2015 by scientists and experts from the US, Korea, Taiwan, and China. It is devoted to the R&D and manufacture of wide-bandgap semiconductors. The first fab is located in Zhuhai National Hi-Tech District (China). Innoscience has established China's first mass production line of 8-inch E-mode GaN-on-Si power devices.

Jay Son, CEO of InnoScience Technology, says: "We have chosen the AIX G5+ C as it has proven to provide excellent thickness and wafer uniformity due to the superior capabilities of the Planetary® batch reactor concept. The newly acquired systems will enable us to ramp up manufacturing of our high-end products such as 650V GaN-on-Si devices with the best cost per wafer in the market."

"Market demand for power electronics, especially for GaN-based devices is picking up speed with Aixtron having the most capable system available in the market. We are pleased that InnoScience leads the way in China and has decided to select this system which convinces not only by performance but also by making the production of GaN power devices commercially viable," comments Felix Grawert, president of Aixtron SE.


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