GaN Transistor For Avionics Offers Up To 1200W

GaN-on-SiC HEMT technology offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4 percent duty factor

Integra Technologies, a leading designer of high-power RF and microwave transistors and amplifiers, is offering a GaN power transistor for L-band avionics.

IGN1011L1200 is a GaN-on-SiC HEMT technology, offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4 percent duty factor. With typical >17dB gain and 75 percent efficiency, IGN1011L1200 is a GEN-2 device.

Assembled via chip and wire technology, using gold metallisation, this unit is housed in a metal-based package and sealed with a ceramic- epoxy lid.

This L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. IGN1011L1200 is 100 percent high power RF tested in a fixed tuned RF test fixture.

BYD And KOSTAL Announce Strategic Partnership For Energy Storage Solutions
AEG Power Solutions To Showcase Modular UPS At Innotrans
Power Integrations Announces Successful Certifications Of USB PD Adapters Using InnoSwitch3 ICs
Silicon Carbide: Driving Package Innovation
SMA Surpasses 1 GW Installed Solar In Latin America
InnoEnergy Start-ups Have Created 1,741 Jobs
Cree Signs $85M SiC Wafer Agreement
Acal BFi In New Pan-European Partnership With Advanced Energy
ESI’s New Allegro LC Extends High-Volume Test Capability To Larger MLCCs
ON Semiconductor To Demonstrate Innovation In Automotive, Power Conversion And IoT At Electronica
Solid State Battery Start-up, Solid Power Announces $20 Million Funding
RES And VBB Celebrate Construction Progress Of 10 MW Storage Project
ABB Connects Sweden´s Largest Solar Park To The Grid
Nexperia MOSFETs Deliver Safe Operating Area And Improved RDS(on) For Hot Swap Designs
Integra Introduces GaN-on-SiC HEMT Kits
World Bank To Invest $1 Billion Towards Battery Storage
ECWFG Series Contributes To Automotive Applications With Safety And Reliability Characteristics
First Current-collapse-free Vertical GaN Power Device
Delta Shrinks Power Supply With Transphorm GaN FETs
Fujitsu Successfully Triples The Output Power Of Gallium-Nitride Transistors
Forsee Power Will Equip The Régiolis Hybrid Regional Trains In France
Researchers Create SiC Colour 'recipe Book'
Teledyne E2v HiRel Releases 650V/60A Bottom Side Cooled GaN FET
Integra To Show Latest GaN-on-SiC Transistor At EuMW

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: