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GaN Transistor For Avionics Offers Up To 1200W

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GaN-on-SiC HEMT technology offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4 percent duty factor

Integra Technologies, a leading designer of high-power RF and microwave transistors and amplifiers, is offering a GaN power transistor for L-band avionics.

IGN1011L1200 is a GaN-on-SiC HEMT technology, offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4 percent duty factor. With typical >17dB gain and 75 percent efficiency, IGN1011L1200 is a GEN-2 device.

Assembled via chip and wire technology, using gold metallisation, this unit is housed in a metal-based package and sealed with a ceramic- epoxy lid.

This L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. IGN1011L1200 is 100 percent high power RF tested in a fixed tuned RF test fixture.

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