Info
Info

GaN Transistor For Avionics Offers Up To 1200W

News
GaN-on-SiC HEMT technology offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4 percent duty factor

Integra Technologies, a leading designer of high-power RF and microwave transistors and amplifiers, is offering a GaN power transistor for L-band avionics.

IGN1011L1200 is a GaN-on-SiC HEMT technology, offers 1.03 - 1.09 GHz of operating frequency, a minimum of 1200W of peak pulse power, 50V supply voltage and 6.4 percent duty factor. With typical >17dB gain and 75 percent efficiency, IGN1011L1200 is a GEN-2 device.

Assembled via chip and wire technology, using gold metallisation, this unit is housed in a metal-based package and sealed with a ceramic- epoxy lid.

This L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. IGN1011L1200 is 100 percent high power RF tested in a fixed tuned RF test fixture.


Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info