NXP Announces GaN Chips In 5G RF Power Range

New GaN offerings include power transistors for 1800 MHz to 2200 MHz bands and for MIMO solutions at 3.5 GHz

At IMS 2018, NXP is introducing new RF GaN wideband power transistors and also expanding its Airfast third-generation Si-LDMOS portfolio of macro and outdoor small cell solutions for 5G.

The new GaN offerings include the A3G22H400-04S wideband power transistor suited for 40 W base stations. It yields up to 56.5 percent efficiency and 15.4 dB of gain and covers cellular bands from 1800 MHz to 2200 MHz. There is also the A3G35H100-04S GaN transistor providing 43.8 percent efficiency and 14 dB of gain. This device enables 16 TX MIMO solutions at 3.5 GHz.

Si-LDMOS products include the A3T18H400W23S, a 1.8 GHz device with Doherty efficiency up to 53.4 percent and gain of 17.1 dB. And the A3T21H456W23S, covering the full 90 MHz band from 2.11 GHz to 2.2 GHz. There is also the A3I20D040WN ultra-wideband LDMOS chip offers peak power of 46.5 dBm with 365 MHz wideband class AB performance of 32 dB of gain, 18 percent efficiency at 10 dB OBO. Finally, the A2I09VD030N has peak power of 46 dBm with class AB performance of 34.5 dB gain, 20 percent efficiency at 10 dB OBO. The RF bandwidth for this product is 575 MHz to 960 MHz.

NXP says that the breadth of its range of RF power technologies—which include GaN, silicon-LDMOS, SiGe, and GaAs - allows product options for 5G that span frequency and power spectrums with varying levels of integration.

ESI’s New Allegro LC Extends High-Volume Test Capability To Larger MLCCs
BYD And KOSTAL Announce Strategic Partnership For Energy Storage Solutions
World Bank To Invest $1 Billion Towards Battery Storage
ON Semiconductor To Demonstrate Innovation In Automotive, Power Conversion And IoT At Electronica
Silicon Carbide: Driving Package Innovation
Nexperia MOSFETs Deliver Safe Operating Area And Improved RDS(on) For Hot Swap Designs
ECWFG Series Contributes To Automotive Applications With Safety And Reliability Characteristics
Integra Introduces GaN-on-SiC HEMT Kits
Acal BFi In New Pan-European Partnership With Advanced Energy
SMA Surpasses 1 GW Installed Solar In Latin America
Integra To Show Latest GaN-on-SiC Transistor At EuMW
Cree Signs $85M SiC Wafer Agreement
Delta Shrinks Power Supply With Transphorm GaN FETs
First Current-collapse-free Vertical GaN Power Device
Solid State Battery Start-up, Solid Power Announces $20 Million Funding
RES And VBB Celebrate Construction Progress Of 10 MW Storage Project
Power Integrations Announces Successful Certifications Of USB PD Adapters Using InnoSwitch3 ICs
Fujitsu Successfully Triples The Output Power Of Gallium-Nitride Transistors
Forsee Power Will Equip The Régiolis Hybrid Regional Trains In France
InnoEnergy Start-ups Have Created 1,741 Jobs
ABB Connects Sweden´s Largest Solar Park To The Grid
Teledyne E2v HiRel Releases 650V/60A Bottom Side Cooled GaN FET
AEG Power Solutions To Showcase Modular UPS At Innotrans
Researchers Create SiC Colour 'recipe Book'

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: