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Toyoda Gosei Announces Highest Current GaN Transistor

 

By employing a vertical device structure, Toyoda Gosei been able to produce a GaN power transistor chip with operating current of over 50A

By employing a device structure in which electrical current flows vertically from or to a substrate, Toyoda Gosei says it has been able to produce a GaN power transistor chip with operating current of over 50A, the highest ever reported for vertical GaN transistors. It has also achieved high-frequency (several megahertz) operation.

Its newly developed vertical GaN power transistors (MOSFET) and Schottky barrier diodes will be presented on panel displays at the Techno-Frontier 2018 Advanced Electronic & Mechatronic Devices and Components Exhibition, held at Makuhari Messe, Chiba, Japan from April 18 to April 20.

The world’s first full vertical-GaN DC-DC converter (shown above) equipped with these devices will also be demonstrated at the company’s booth.

The company says this technology could be used to make lighter, more compact and higher efficiency power control units for automobiles, DC-DC converters, high frequency power sources, and higher output wireless power supplies


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