Integra Announces GaN Transistors For S-Band Radar
High power 135W and 130W GaN-on-SiC transistors are 50Î© matched
Integra Technologies, a supplier of high-power RF and microwave transistors and amplifiers, has announced a pair of 135W and a 130W GaN-on-SiC transistors for S-band radar applications.
IGT2731M130 is a 50Î© matched high-power GaN HEMT transistor, suppling a minimum of 130W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55 percent, at pulse conditions of 300 microseconds/10 percent duty cycle.
It operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode device. It requires a negative gate bias voltage and bias sequencing.
IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power. This transistor is also a 50Î© matched high-power GaN HEMT transistor and is also a depletion-mode device that requires a negative gate bias voltage and bias sequencing.
Both products come in Integra's package PL44A1, size is at 20.32 mm wide and 10.16 mm long. Earless, they are 10.16 mm wide and 10.16 mm long. Assembled via chip and wire technology, using gold metallisation, both units are housed in a metal-based package and sealed with a ceramic-epoxy lid.