Integra Announces GaN Transistors For S-Band Radar


High power 135W and 130W GaN-on-SiC transistors are 50Ω matched

Integra Technologies, a supplier of high-power RF and microwave transistors and amplifiers, has announced a pair of 135W and a 130W GaN-on-SiC transistors for S-band radar applications.

IGT2731M130 is a 50Ω matched high-power GaN HEMT transistor, suppling a minimum of 130W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55 percent, at pulse conditions of 300 microseconds/10 percent duty cycle.

It operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode device. It requires a negative gate bias voltage and bias sequencing.

IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power. This transistor is also a 50Ω matched high-power GaN HEMT transistor and is also a depletion-mode device that requires a negative gate bias voltage and bias sequencing.

Both products come in Integra's package PL44A1, size is at 20.32 mm wide and 10.16 mm long. Earless, they are 10.16 mm wide and 10.16 mm long. Assembled via chip and wire technology, using gold metallisation, both units are housed in a metal-based package and sealed with a ceramic-epoxy lid.

LONGi Launches New 5GW Mono Module Plant, Increases Supply Capacity
VisIC Releases 6.7kW Charger Reference Design
GEN2 650V SiC Schottky Diodes Offer Improved Efficiency
Dialog Semiconductor To Acquire Silicon Motion’s Mobile Communications Business
Frost & Sullivan Recognises GaN Systems With Innovation Award
Innovative Direct Current Meter For Fast Charging Stations From Isabellenhütte And Innogy
EPC 100V EGaN Device Is 97 Percent Efficient
ABB Helps Establish BP’s Pilot DC Fast Charging Station In China
Infineon Manufactures 1000 A Voltage Regulator Solution For Next Generation AI And 5G Networking
SiC Adoption Is Accelerating Says Yole
ROHM Offers The Industry’s Largest* Lineup Of Automotive-Grade SiC MOSFETs
GaN Systems Debuts New Power Transistors
NORD/LB And BayWa R.e. Close Financing For Three Italian 66 MW Wind Farms
ACEINNA Launches High Accuracy Current Sensors Based On AMR Technology
JEDEC WBG Committee Publishes First Document
JLR Installs UK’s Largest Smart EV Charging Facility
BP Chargemaster And Swarco UK Receive Contracts To Install EV Charging Points From Highways England
Is The UK Really Ready For An Electric Vehicle Rollout?
Rohm Extends Automotive SiC MOSFET Line
EPC To Show Latest GaN Technology At APEC 2019
Škoda To Install Nearly 7,000 EV Charging Points At Its Czech Factories
A New Generation Of Power Electronics Will Make Electric Cars More Efficient
Aveox Partners With GaN Systems On Aerospace Modules
AEG Licensing SEMAG To Manufacture Industrial-grade Solar Inverters

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: