Info
Info

Panasonic Develops Insulated-Gate GaN Power Transistor

News

Low-loss and high-speed switching accelerates the miniaturisation of equipment, and expands the GaN power transistor market

Panasonic has developed an insulated-gate GaN power transistor capable of continuous stable operation with no variation in its threshold voltage.

According to the company, this technology makes it possible to further increase the speed of GaN power transistors, enabling the miniaturisation of various electronic equipment.

Metal Insulator Semiconductor (MIS) type GaN power transistors are expected to be practical for next-generation power devices. Panasonic has been researching MIS gate structure as a future technology to further increase its operation speed. However, hysteresis occurs in conventional MIS type GaN power transistors, and high-speed switching operations with a high current and a high voltage had not yet been confirmed.

Now, the company has confirmed the continuous stable operation of MIS type GaN power transistors "” which are required for future ultrafast GaN power devices "” at a current of 20 A. With a significant increase in switching frequency, the miniaturisation of peripheral passive components becomes possible, says Panasonic, helping to reduce the size of power supplies for servers and base stations.

Panasonic's newly developed GaN power transistors have continuous stable operation at a maximum gate voltage of +10 V. They also operate at high current and voltages (drain current of 20 A and breakdown voltage of 730 V). High-speed switching features an OFF operation time of 1.9 ns and ON operation time of 4.1 ns.

Use of AlON gate insulator

The use of aluminum oxynitride (AlON) and the improvement of the insulator formation processes reduces electron traps within the insulator. This results in the stable threshold voltage, which enables continuous switching operation. By suppressing the hysteresis at gate voltages up to +10 V, the stable operation of power conversion equipment with Panasonic's MIS type GaN power transistors is expected to be realised.

Damage-free recessed gate structure

When introducing the recessed gate structure necessary for high-current operation, suppressing processing damages under the gate electrode was an issue. In this development, it was possible to suppress such processing damages by forming the outermost layer at high temperature following the formation of the recess. As a result, normally-off operation as well as the suppression of hysteresis was achieved.

Advanced GaN on Si technologies

Panasonic has been already mass-producing GaN power transistors called GIT. This new MIS type GaN power transistor was developed as a future technology to achieve higher-speed operation. By applying the fabrication process technologies acquired through the mass production of GITs on silicon (Si) substrates, high current as well as high breakdown voltage was achieved.

Dialog Semiconductor To Acquire Silicon Motion’s Mobile Communications Business
VisIC Releases 6.7kW Charger Reference Design
GaN Systems Debuts New Power Transistors
Is The UK Really Ready For An Electric Vehicle Rollout?
ACEINNA Launches High Accuracy Current Sensors Based On AMR Technology
Infineon Manufactures 1000 A Voltage Regulator Solution For Next Generation AI And 5G Networking
GEN2 650V SiC Schottky Diodes Offer Improved Efficiency
ROHM Offers The Industry’s Largest* Lineup Of Automotive-Grade SiC MOSFETs
Škoda To Install Nearly 7,000 EV Charging Points At Its Czech Factories
BP Chargemaster And Swarco UK Receive Contracts To Install EV Charging Points From Highways England
JLR Installs UK’s Largest Smart EV Charging Facility
LONGi Launches New 5GW Mono Module Plant, Increases Supply Capacity
Aveox Partners With GaN Systems On Aerospace Modules
Innovative Direct Current Meter For Fast Charging Stations From Isabellenhütte And Innogy
AEG Licensing SEMAG To Manufacture Industrial-grade Solar Inverters
Rohm Extends Automotive SiC MOSFET Line
JEDEC WBG Committee Publishes First Document
NORD/LB And BayWa R.e. Close Financing For Three Italian 66 MW Wind Farms
EPC 100V EGaN Device Is 97 Percent Efficient
SiC Adoption Is Accelerating Says Yole
A New Generation Of Power Electronics Will Make Electric Cars More Efficient
EPC To Show Latest GaN Technology At APEC 2019
Frost & Sullivan Recognises GaN Systems With Innovation Award
ABB Helps Establish BP’s Pilot DC Fast Charging Station In China

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Power Electronics World Magazine, the Power Electronics World Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info