Disco Introduces Larger SiC Ingot Saw
New DAL7440 laser saw supports KABRA processing of 8-inch diameter wafers
To address the growing demand for SiC as a material to replace silicon in power devices. Disco developed its KABRA process (SiC ingot slicing method) a couple of years ago.
The KABRA (key amorphous-black repetitive absorption) process focuses a laser in the interior of a SiC ingot that, through repetitive passes decomposes SiC into amorphous silicon and amorphous carbon, and forms a layer that acts as the base point for wafer separation.
It exhibited its first DAL7420 laser saw for 6-inch diameter SiC wafers at SEMICON Japan 2016. Since then, it has been developing technology to handle bigger wafers and has now introduced the DAL7440 laser saw, which supports the KABRA processing of 8-inch diameter wafers.
The DAL7440 supports 8-inch diameter ingots with support for future increases to ingot diameter size. Maximum ingot thickness is 40 mm. Other features include alignment-free orientation, an ingot thickness measurement function, and the ability to track the total number of processed wafers
DAL7440 will be set up in DISCO’s North Carolina office to handle processing test requests in the US.