Mitsubishi And The University Of Tokyo Quantify Factors For Reducing SiC Power Resistance


Mitsubishi Electric Corporation and the
University of Tokyo have announced that they believe they are the first to
quantify the impacts of three electron-scattering mechanisms for determining
the resistance of silicon carbide (SiC) power semiconductor devices in power semiconductor
modules. They have found that resistance under the SiC interface can be reduced
by two-thirds by suppressing electron scattering by the charges, a discovery
that is expected to help reduce energy consumption in power equipment by
lowering the resistance of SiC power semiconductors.

Going forward, Mitsubishi Electric will continue refining
the design and specifications of its SiC metal-oxide semiconductor field-effect
transistor (SiC MOSFET) to further lower the resistance of SiC power semiconductor
devices. This research achievement was initially announced at The International
Electron Devices Meeting (IEDM2017) in San Francisco, California on
December 4 (PST).

The impact that charges and atomic vibration have on
electron scattering under the SiC interface was revealed to be dominant in
Mitsubishi Electric’s analyses of fabricated devices. Electron scattering
focusing on atomic vibration was measured using technology from the University
of Tokyo. Although it has been recognized that electron scatting under the SiC
interface is limited by three factors, namely, the roughness of the SiC
interface, the charges under the SiC interface and the atomic vibration (see
Fig. 1), the contribution of each factor had been unclear. A planar-type
SiC-MOSFET in which electrons conduct away from the SiC interface to around several
nano meters was fabricated to confirm the impact of the charges. As a result,
Mitsubishi Electric and the University of Tokyo achieved an unprecedented
confirmation that the roughness of the SiC interface has little effect while
charges under the SiC interface and atomic vibration are dominant factors (see
Fig. 2).

Compared with a previous planar-type SiC-MOSFET device,
resistance was reduced by two thirds owing to suppression of electron
scattering, which was achieved by making the electrons conduct away from the
charges under the SiC interface. The previous planar-type device used for
comparison has the same interface structure as that of the SiC-MOSFET
fabricated by Mitsubishi Electric.

For the test, Mitsubishi Electric handled the design,
fabrication and analysis of the resistance-limiting factors and the University
of Tokyo handled the measurement of electron-scattering factors.

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