Samsung Starts Mass Production Of 2nd Generation 10nm FinFET Process Technology
Samsung Electronics has announced that its Foundry Business
has commenced mass production of System-on-Chip (SoC) products built on its
second generation 10-nanometer (nm) FinFET process technology, 10LPP (Low Power
10LPP process technology allows up to 10-percent higher
performance or 15-percent lower power consumption compared to its first
generation 10nm process technology, 10LPE (Low Power Early). As this process is
derived from the already proven 10LPE technology, it offers competitive
advantages by greatly reducing turn-around time from development to mass
production and by providing significantly higher initial manufacturing yield.
SoCs designed with 10LPP process technology will be used in
digital devices scheduled to launch early next year and are expected to become
more widely available throughout the year.
"We will be able to better serve our customers through the
migration from 10LPE to 10LPP with improved performance and higher initial
yield," said Ryan Lee, Vice President of Foundry Marketing at Samsung
Electronics. "Samsung with its long-living 10nm process strategy will continue
to work on the evolution of 10nm technology down to 8LPP to offer customers
distinct competitive advantages for a wide range of applications."
Samsung also announced that its newest manufacturing line,
S3, located in Hwaseong, Korea, is ready to ramp up production of process
technologies including 10nm and below. S3 is the third fab of Samsung's Foundry
Business, following S1 in Giheung, Korea and S2 in Austin, USA. Samsung's 7nm
FinFET process technology with EUV (Extreme Ultra Violet) will also be mass
produced at S3.