UMS GaN HEMT Process Qualified For Space
0.25Î¼m process is now part of the European Preferred Part list supported by the European Space agency
United Monolithic Semiconductors (UMS), a European specialist focused on RF, microwave and millimetre wave devices, has announced that its GH25-10 MMIC GaN HEMT technology has been successfully space evaluated. It is now part of the European Preferred Part list (EPPL) supported by the European Space agency (ESA).
This GaN 0.25Î¼m HEMT process is optimised for high power applications up to 20GHz. It also provides a good HEMT noise performance also enabling LNA design.
The MMIC process includes, precision TaN resistors, high value TiWSi resistors, MIM capacitors, inductors, air-bridges, via-holes through the substrate and two metal layers for interconnection.
The reliability study and evaluation of the technology have been supported by ESA, CNES and French MoD (DGA).