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Monday 2nd June 2014
The gallium nitride devices are claimed to offer long life, reduced size and weight and better efficiencies than their travelling wave tube counterparts
Friday 30th May 2014
The series includes what Cree says is the industry’s first 300W, 2.7 GHz plastic packaged gallium nitride telecom transistor. The devices are designed to enable higher data rate telecom systems
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Friday 30th May 2014
The SiC devices are suited for use in server power supplies and power conditioners for photovoltaic power generation system
Wednesday 28th May 2014
The custom gas system performs automatic gas cylinder switchover and is suited to low flow applications or reactors operating in a limited space
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Wednesday 28th May 2014
The new 802.11ac power amplifier uses the firm's patented indium gallium phosphide technology
Tuesday 27th May 2014
Tuesday 27th May 2014
The silicon carbide (SiC) devices aim to improve hybrid vehicle fuel efficiency by 10 percent and reduce PCU size by 80 percent compared to current silicon-only PCUs
Tuesday 27th May 2014
The high performance and compact SPM devices are suited for use in power motors under 100W
Tuesday 27th May 2014
The mutual decision sees CFO Wolfgang Breme leaving the group
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Tuesday 27th May 2014
The wafers will be used for the RF and power semiconductor markets

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