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Tuesday 25th March 2014
The devices support high output current in combination with an external power transistor
Tuesday 25th March 2014
The contract is aimed at the company transferring 0.14 µm gallium nitride technology and manufacturing on 6 inch wafers to produce air force millimetre wave devices
Monday 24th March 2014
The new mid-voltage power MOSFETs include low on-resistance 80 V and 100 V devices in TO-220 packages
Friday 21st March 2014
The new lineup should Improve power efficiency and reduce product footprint
Thursday 20th March 2014
Yole believes GaN-on-silicon wafers are expected to capture more than 1.5 percent of the overall power substrate volume, This may suggest that 600V devices would take off in 2014 to 2015
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Thursday 20th March 2014
The firm says its gallium nitride technology greatly reduces material waste and the energy needed to produce GaAs or silicon line amplifiers
Wednesday 19th March 2014
The acquisition will enable Hittite to provide high power gallium arsenide and gallium nitride wideband amplifiers
Tuesday 18th March 2014
The new subsidiary aims to enhance service and support for the rapidly expanding micro- and nano-electronic manufacturing customer base in region
Tuesday 18th March 2014
Dr. Finlay ColvilleVice-PresidentSolarbuzz
Tuesday 18th March 2014
Carbon anti-site vacancy pairs in SiC are sufficiently bright to allow detection at the single-photon level enabling the generation of single photons at a high repetition rate, This makes them potentially useful qubits for quantum information processing and applications in photonics
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Monday 17th March 2014
The power electronics executive will head up the global commercialisation of the company’s gallium nitride power semiconductors
Friday 14th March 2014
With the appointment, the provider of III-nitride epitaxial material products hopes to accelerate the industrialisation of gallium nitride technology in the near future
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Thursday 13th March 2014
STMicroelectronics says its silicon carbide power MOSFETs have a high-temperature performance edge over other comparable products
Wednesday 12th March 2014
The firms latest power gallium nitride 'Spatium' devices can be used for airborne wireless and defence applications            
Tuesday 11th March 2014
The firm says its development boards in half-bridge topology with onboard gate drives simplify evaluation of the EPC8000 family of ultra high frequency, high performance eGaN FETs
Monday 10th March 2014
The device is designed for telecom power supply applications
Friday 7th March 2014
The surface mount technology is claimed to enable faster time-to-market through the use of high volume commercial, surface mount assembly methods

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