Toshiba releases 650V SiC MOSFETs in TOLL package
Toshiba has launched three 650V SiC MOSFETs equipped with its latest 3rd generation SiC MOSFET chips and housed in surface-mount TOLL packages. The devices are suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators.
The products are Toshiba’s 3rd generation SiC MOSFETs in a general-purpose surface-mount TOLL package, which reduces device volume by more than 80 percent compared to through-hole packages such as TO-247 and TO-247-4L(X), and improves equipment power density.
The TOLL package also offers lower parasitic impedance than through-hole packages, which helps to reduce switching losses. As a 4-terminal[3] package, a Kelvin connection can be used as the signal source terminal for the gate drive.
This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW048U65C, turn-on loss and turn-off loss are approximately 55 percent and 25 percent lower, respectively, than in current Toshiba products, which will contribute to lower equipment power loss.
