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Wednesday 9th April 2014
The gallium nitride market will be dominated by power devices and draw most of its revenue from the communication infrastructure sector
Wednesday 9th April 2014
Mobile Hotspots program progresses towards providing 1 Gb/s communications backbone to deployed units. During Phase 1, performers demonstrated output power exceeding 1 watt and 20 percent power added efficiency (PAE) from a single gallium nitride (GaN) chip operating at E-Band frequencies
Tuesday 8th April 2014
Top quality diamond, with minimal defects, will be vital for it to compete with SiC, GaN and silicon in the high-frequency and high-power device market
Tuesday 8th April 2014
The firm says incumbent gallium arsenide-based RF solutions do not rise to the challenge of new complexity in the telecoms market
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Monday 7th April 2014
The collaboration is intended to realise critical radio components for small battery-operated wireless devices
Thursday 3rd April 2014
Using hybrid HVPE-Ammontermal approaches allows the manufacture of gallium nitride material for high-end applications. The key is that a low dislocation density is achieved
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Wednesday 2nd April 2014
Diamond materials are anticipated to triple power density over silicon carbide
Wednesday 2nd April 2014
The systems are suited for testing devices made of  wide-bandgap materials like SiC and GaN, designed for use in "green," energy-efficient power generation and transmission systems and hybrid and all-electric vehicles.
Wednesday 2nd April 2014
Tuesday 1st April 2014
Wide band gap semiconductors may reduce the size of a vehicle cooling system by about 60 percent and cut the size of a fast DC charging station
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Tuesday 1st April 2014
The high gain gallium arsenide  power amplifiers with high linearity performance are suited to commercial, industrial and military applications
Tuesday 1st April 2014
The agreement will enable MACOM to deliver GaN wafers grown on 100mm, 150mm and 200mm silicon substrates for RF applications
Monday 31st March 2014
The gallium nitride on silicon power transistors can operate in harsh environmental conditions

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