Advanced semiconductors now support previously unattainable efficiency and power density. But these devices place high demands on test and measurement (T&M) equipment; oscilloscopes with isolated input channels are ideal solutions with wide-ranging analytical abilities. By: Dr. Markus Herdin, Product Manager for Oscilloscopes, Rohde & Schwarz, Munich
Imec and UTAC have developed a unique process for the wafer thinning and backside metallization of highly stressed GaN-on-200 mm silicon wafers.
This has resulted in a packaged 650 V GaN device â€“ smaller than state-of-the-art. Stefaan Decoutere, Program Director GaN Power Electronics at imec and Nicolo Ronchi, Researcher at imec explains the process.