Wednesday 6th January 2016
Wednesday 6th January 2016
Wednesday 6th January 2016
Monday 4th January 2016
Monday 4th January 2016
Tuesday 29th December 2015
Half-Bridge evaluation board simplifies GaN transistor testing
Tuesday 22nd December 2015
New report shows GaN p-n diodes with near ideal performance
Sunday 20th December 2015
Friday 18th December 2015
Company invests in Monolith to capitalise on growing power semiconductor market
Thursday 17th December 2015
Company takes advantage of rise in demand for engineered substrates
Thursday 17th December 2015
Thursday 17th December 2015
Wednesday 16th December 2015
Tuesday 15th December 2015
Tuesday 15th December 2015
Ampleon broaden portfolio with heavy GaN investment
Tuesday 15th December 2015
$3.4 million contract, 18-month development program that will demonstrate the benefits of GE’s SiC MOSFET technology in two critical systems
Tuesday 15th December 2015
Monday 14th December 2015
Achievements in Low Dispersion Buffers and High Current High-Threshold Voltage p-GaN Devices Presented at IEDM 2015
Friday 11th December 2015
Friday 11th December 2015
Friday 11th December 2015
A new atomically-flat transistor developed by UC Santa Barbara engineers overcomes one of the fundamental conventional transistors and reduces power dissipation by over 90 percent Professor Kaustav Banerjee (right) with researchers in his Nanoelectronics Research Lab at UC Santa Barbara.Credit: UCSB
Tuesday 8th December 2015
New company will exploit potential of RF data and energy transfer
Tuesday 8th December 2015
Market responding 'faster than planned'
Tuesday 8th December 2015
