Friday 8th December 2017
A new UK project, CS-MAGIC, is set to thrust wide bandgap magnetic field sensors into the commercial limelight, reports Rebecca Pool.
Friday 8th December 2017
Thursday 7th December 2017
Bonding single-crystal diamond to a SiC substrate at room temperature dissipates power in GaN HEMTs to increase radar range
Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows
high-efficiency cooling of high-power gallium nitride (GaN)
high-electron-mobility transistors (HEMTs), enabling stable operations
of power amplifiers at high power levels.
Wednesday 6th December 2017
Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Air Force Research Laboratory researchers use boron nitride to transfer GaN circuits to flexible substrates
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Wednesday 6th December 2017
Tuesday 5th December 2017
Mitsubishi and University of Tokyo are first to quantify electron scattering mechanisms in SiC power devices to reduce energy consumption
Tuesday 5th December 2017
Tuesday 5th December 2017
Major four-year research project aims to ramp up
the commercialisation of new products and processes across the renewable energy
sector in Northern Ireland, Ireland and Scotland
Tuesday 5th December 2017
Monday 4th December 2017
Global economic
growth, new markets and resurging defence opportunities are fueling the growth
of advanced inertial, high-end sensors (HES) according to Yole Developpement researchers.
Monday 4th December 2017
GALOIS Series uses bright-field confocal optics, enabling high-speed inspection of various kinds of GaN wafer defects and high-resolution observation of defect images
