Tuesday 13th November 2018
Funds from the Sturm Family Office will be used to accelerate commercialisation of novel GaAs-based power semiconductor technology
Tuesday 13th November 2018
Tuesday 13th November 2018
CoolGaN 600 V e-mode HEMTs and GaN EiceDRIVER chips offer higher power density, smaller and lighter designs
Tuesday 13th November 2018
Achieves the highest level of reliability in extreme environments
Monday 12th November 2018
Extends range of G-FET and G-DRIVE products for multi-kilowatt applications
Monday 12th November 2018
Thursday 8th November 2018
Company to demo size, weight, power, and system cost benefits of GaN
Tuesday 6th November 2018
Air Force Research Lab (AFRL) contract aims to reduce modeling and simulation costs in next-generation defence and commercial systems
Friday 2nd November 2018
A pioneering solar installation has been installed at the University of Applied Sciences and Arts FHNW in Switzerland as students champion the need for sustainable energy and self-consumption.
Tuesday 23rd October 2018
Contract to extend AN/TPQ-53 radar range includes transition to GaN technology
Thursday 18th October 2018
Chinese team report GaN-on-GaN power rectifier that outperforms lateral GaN-on-Si devices
Wednesday 17th October 2018
Wednesday 17th October 2018
Company to supply 150 mm SiC bare and epitaxial wafers to power device firm
Monday 15th October 2018
Transistor evaluation kits designed for verifying performance of high power amplifier designs
Tuesday 9th October 2018
Monday 8th October 2018
Monday 8th October 2018
Monday 8th October 2018
As more and more wide bandgap semiconductors reach electric vehicle markets, industry can expect rapid power module package development, reports Compound Semiconductor.
Wednesday 3rd October 2018
Tuesday 2nd October 2018
German team documents temperature and proton dosages for optical properties
Tuesday 2nd October 2018
Monday 1st October 2018
Thursday 20th September 2018
Power system size reduced by ~25 percent allowing inclusion of back-up battery in CRPS form factor
Thursday 20th September 2018
High power C-band transistor offers a minimum of 25W output power at 36V of drain bias
