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Friday 16th May 2014
All-SiC 300A, 1.2kV half-bridge module doubles power density and increased efficiencies 
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Monday 12th May 2014
Three new tiers of manufacturing quality substrates to optimize next-generation power electronic device designs
Friday 9th May 2014
The aggregate purchase price has been increased to $300 million
Friday 9th May 2014
The film combines high glass transition temperature and stress absorption with thermal performance in die‐attach power dissipation
Thursday 8th May 2014
The gallium nitride devices are designed to support data-hungry small cell networks
Wednesday 7th May 2014
The firms will work together to develop high volume production processes and equipment necessary to bond the ultra-thin sapphire and SiC lamina to engineered substrates such as glass, silicon, and plastics
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Wednesday 7th May 2014
Maheshwari brings more than twenty years of experience in engineering and finance to Veeco
Wednesday 7th May 2014
The high efficiency 48 V output model supports gallium nitride power amplifier systems
Tuesday 6th May 2014
Odakyu's 1000 series urban train to achieve dramatic lower energy and remodeling costs with silicon carbide technology
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Friday 2nd May 2014
The firm will use Keragis' GaN and GaAs technology for power amplifiers
Friday 2nd May 2014
The firm's tool characterises power device parameters, such as RDSON , Leakage, Ciss, Coss, Crss and gate charge
Friday 2nd May 2014
The universal-mounted resistor is claimed to offer a drop-in replacement for competing solutions
Friday 2nd May 2014
The focus of the project will be on widebandgap semiconductors such as silicon carbide and gallium enable smaller, faster and more reliable power electronic devices than those that are silicon-based

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