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Wednesday 10th January 2018
Collaborative partnership to develop gallium oxide-based devices for use in electrified vehicles
Tuesday 9th January 2018
New transistor and IC technologies are rising to address the issues of complexity, cost and risk as manufacturers and researchers alike look beyond conventional CMOS device scaling evolution. Multiple manufacturers and researchers are seeking new paths and innovating new processes and materials to find lower cost, higher performing solutions for next-generation chips – We explore several leading and promising avenues for devices below 10nm
Tuesday 9th January 2018
New DAL7440 laser saw supports KABRA processing of 8-inch diameter wafers
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Tuesday 9th January 2018
650V GaN FETs are used in Corsair’s new AX1600i power supply unit
Friday 5th January 2018
Transistor is eight times smaller than equivalently rated MOSFETs
Wednesday 3rd January 2018
Unprecedented noise immunity contributes to improved reliability and simpler designs in automotive sensor applications
Wednesday 3rd January 2018
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Wednesday 20th December 2017
JEDEC announces launch of JC-70 Wide Bandgap Power Electronic Conversion Semiconductor Committee aiming to provide industry standards for reliability, testing and parametrics of WBG power semiconductors
Monday 11th December 2017
GaN Systems plans to use the funding to expand sales and accelerate product innovation
Friday 8th December 2017
High voltage vertical transistor design could drastically reduce energy waste
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Friday 8th December 2017
A new UK project, CS-MAGIC, is set to thrust wide bandgap magnetic field sensors into the commercial limelight, reports Rebecca Pool.
Thursday 7th December 2017
Bonding single-crystal diamond to a SiC substrate at room temperature dissipates power in GaN HEMTs to increase radar range
Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels.
Wednesday 6th December 2017
Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions

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