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Tuesday 29th December 2015
Half-Bridge evaluation board simplifies GaN transistor testing
Tuesday 22nd December 2015
New report shows GaN p-n diodes with near ideal performance
Friday 18th December 2015
Company invests in Monolith to capitalise on growing power semiconductor market
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Thursday 17th December 2015
Company takes advantage of rise in demand for engineered substrates
Tuesday 15th December 2015
Ampleon broaden portfolio with heavy GaN investment
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Tuesday 15th December 2015
$3.4 million contract, 18-month development program that will demonstrate the benefits of GE’s SiC MOSFET technology in two critical systems
Monday 14th December 2015
Achievements in Low Dispersion Buffers and High Current High-Threshold Voltage p-GaN Devices Presented at IEDM 2015
Friday 11th December 2015
A new atomically-flat transistor developed by UC Santa Barbara engineers overcomes one of the fundamental conventional transistors and reduces power dissipation by over 90 percent Professor Kaustav Banerjee (right) with researchers in his Nanoelectronics Research Lab at UC Santa Barbara.Credit: UCSB
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Tuesday 8th December 2015
New company will exploit potential of RF data and energy transfer
Tuesday 8th December 2015
Market responding 'faster than planned' 
Saturday 5th December 2015
Company to show RF devices for L-, S-, C-, and X-Band at IRSI 2015
Thursday 3rd December 2015
The battery is the heart of the electric car. Fraunhofer researchers have developed an energy storage device which is significantly more cost-effective over the entire life cycle in comparison with previous models. If one of the more than one hundred battery cells is defective, it can be replaced easily. Until now, the entire battery had to be replaced.

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