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Monday 11th December 2017
GaN Systems plans to use the funding to expand sales and accelerate product innovation
Friday 8th December 2017
High voltage vertical transistor design could drastically reduce energy waste
Friday 8th December 2017
A new UK project, CS-MAGIC, is set to thrust wide bandgap magnetic field sensors into the commercial limelight, reports Rebecca Pool.
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Thursday 7th December 2017
Bonding single-crystal diamond to a SiC substrate at room temperature dissipates power in GaN HEMTs to increase radar range
Thursday 7th December 2017
Toshiba describes process for reducing impurities in the gate dielectric of GaN MOSFETs at IEDM
Thursday 7th December 2017
Fujitsu indicates that using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels.
Wednesday 6th December 2017
Prototype transmit/receive module on single 6x6 mm chip will deliver miniaturised space radar systems for future missions
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Wednesday 6th December 2017
Air Force Research Laboratory researchers use boron nitride to transfer GaN circuits to flexible substrates
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Wednesday 6th December 2017
Tuesday 5th December 2017
Mitsubishi and University of Tokyo are first to quantify electron scattering mechanisms in SiC power devices to reduce energy consumption
Tuesday 5th December 2017

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